Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation
Publication type: Journal Article
Publication date: 2014-01-27
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract
We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.
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Metrics
14
Total citations:
14
Citations from 2024:
4
(28.58%)
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GOST
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Deng C., Otto M., Lupascu A. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation // Applied Physics Letters. 2014. Vol. 104. No. 4. p. 43506.
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Deng C., Otto M., Lupascu A. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation // Applied Physics Letters. 2014. Vol. 104. No. 4. p. 43506.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.4863686
UR - https://doi.org/10.1063/1.4863686
TI - Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation
T2 - Applied Physics Letters
AU - Deng, Chunqing
AU - Otto, M.
AU - Lupascu, A.
PY - 2014
DA - 2014/01/27
PB - AIP Publishing
SP - 43506
IS - 4
VL - 104
SN - 0003-6951
SN - 1077-3118
ER -
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BibTex (up to 50 authors)
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@article{2014_Deng,
author = {Chunqing Deng and M. Otto and A. Lupascu},
title = {Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation},
journal = {Applied Physics Letters},
year = {2014},
volume = {104},
publisher = {AIP Publishing},
month = {jan},
url = {https://doi.org/10.1063/1.4863686},
number = {4},
pages = {43506},
doi = {10.1063/1.4863686}
}
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MLA
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Deng, Chunqing, et al. “Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation.” Applied Physics Letters, vol. 104, no. 4, Jan. 2014, p. 43506. https://doi.org/10.1063/1.4863686.