Open Access
Si and Sn doping of ε-Ga2O3 layers
Antonella Parisini
1
,
A. Bosio
1
,
V Montedoro
1, 2
,
A Gorreri
1
,
Alessio Lamperti
3
,
M. Bosi
2
,
G Garulli
1
,
S Vantaggio
1
,
Roberto Fornari
1, 2
2
Institute of Materials for Electronics and Magnetism (IMEM-CNR) 2 , Viale delle Scienze 37/A, 43124 Parma, Italy
|
Publication type: Journal Article
Publication date: 2019-03-01
scimago Q1
wos Q2
SJR: 1.124
CiteScore: 7.9
Impact factor: 4.5
ISSN: 2166532X
General Materials Science
General Engineering
Abstract
Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest doping concentrations were few 1018 cm−3 and about 1017 cm−3 for Si and Sn doping, with corresponding resistivity below 1 and 10 Ω cm, respectively. Temperature dependent transport investigation in the range of 10-600 K shows a resistivity behavior consistent with the Mott law, suggesting that conduction through localized states dominates the electrical properties of Si- and Sn-doped samples. For both types of dopants, two different mechanisms of conduction through impurity band states seem to be present, each of them determining the transport behavior at the lower and higher temperatures of the measurement range.
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55
Total citations:
55
Citations from 2024:
10
(18.18%)
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MLA
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GOST
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Parisini A. et al. Si and Sn doping of ε-Ga2O3 layers // APL Materials. 2019. Vol. 7. No. 3. p. 31114.
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Parisini A., Bosio A., Montedoro V., Gorreri A., Lamperti A., Bosi M., Garulli G., Vantaggio S., Fornari R. Si and Sn doping of ε-Ga2O3 layers // APL Materials. 2019. Vol. 7. No. 3. p. 31114.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1063/1.5050982
UR - https://doi.org/10.1063/1.5050982
TI - Si and Sn doping of ε-Ga2O3 layers
T2 - APL Materials
AU - Parisini, Antonella
AU - Bosio, A.
AU - Montedoro, V
AU - Gorreri, A
AU - Lamperti, Alessio
AU - Bosi, M.
AU - Garulli, G
AU - Vantaggio, S
AU - Fornari, Roberto
PY - 2019
DA - 2019/03/01
PB - AIP Publishing
SP - 31114
IS - 3
VL - 7
SN - 2166-532X
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2019_Parisini,
author = {Antonella Parisini and A. Bosio and V Montedoro and A Gorreri and Alessio Lamperti and M. Bosi and G Garulli and S Vantaggio and Roberto Fornari},
title = {Si and Sn doping of ε-Ga2O3 layers},
journal = {APL Materials},
year = {2019},
volume = {7},
publisher = {AIP Publishing},
month = {mar},
url = {https://doi.org/10.1063/1.5050982},
number = {3},
pages = {31114},
doi = {10.1063/1.5050982}
}
Cite this
MLA
Copy
Parisini, Antonella, et al. “Si and Sn doping of ε-Ga2O3 layers.” APL Materials, vol. 7, no. 3, Mar. 2019, p. 31114. https://doi.org/10.1063/1.5050982.
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