Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
N Lobo Ploch
1, 2
,
Frank Mehnke
3
,
Luca Sulmoni
3
,
H. K. Cho
1
,
M. Guttmann
3
,
J Glaab
1
,
Katrin Hilbrich
1
,
Tim Wernicke
3
,
S. Einfeldt
1
,
Michael Kneissl
1, 3
2
UVphotonics NT GmbH 2 , Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
|
Publication type: Journal Article
Publication date: 2020-09-14
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract
Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are presented. The entire DUV-LED process chain was optimized including the reduction of the dislocation density using epitaxially laterally overgrown AlN/sapphire substrates, development of vanadium-based low resistance n-metal contacts, and employment of high thermally conductive AlN packages. Estimated device lifetimes above 1500 h are achieved after a burn-in of 100 h. With the integration of a UV-transparent lens, a strong narrowing of the far-field pattern was achieved with a radiant intensity of 3 mW/sr measured at 20 mA.
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Total citations:
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Lobo Ploch N. et al. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates // Applied Physics Letters. 2020. Vol. 117. No. 11. p. 111102.
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Lobo Ploch N., Mehnke F., Sulmoni L., Cho H. K., Guttmann M., Glaab J., Hilbrich K., Wernicke T., Einfeldt S., Kneissl M. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates // Applied Physics Letters. 2020. Vol. 117. No. 11. p. 111102.
Cite this
RIS
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TY - JOUR
DO - 10.1063/5.0015263
UR - https://doi.org/10.1063/5.0015263
TI - Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
T2 - Applied Physics Letters
AU - Lobo Ploch, N
AU - Mehnke, Frank
AU - Sulmoni, Luca
AU - Cho, H. K.
AU - Guttmann, M.
AU - Glaab, J
AU - Hilbrich, Katrin
AU - Wernicke, Tim
AU - Einfeldt, S.
AU - Kneissl, Michael
PY - 2020
DA - 2020/09/14
PB - AIP Publishing
SP - 111102
IS - 11
VL - 117
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
BibTex (up to 50 authors)
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@article{2020_Lobo Ploch,
author = {N Lobo Ploch and Frank Mehnke and Luca Sulmoni and H. K. Cho and M. Guttmann and J Glaab and Katrin Hilbrich and Tim Wernicke and S. Einfeldt and Michael Kneissl},
title = {Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates},
journal = {Applied Physics Letters},
year = {2020},
volume = {117},
publisher = {AIP Publishing},
month = {sep},
url = {https://doi.org/10.1063/5.0015263},
number = {11},
pages = {111102},
doi = {10.1063/5.0015263}
}
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Lobo Ploch, N., et al. “Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates.” Applied Physics Letters, vol. 117, no. 11, Sep. 2020, p. 111102. https://doi.org/10.1063/5.0015263.
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