Journal of Applied Physics

, volume 129 , issue 10 , pages 100901

Next generation ferroelectric materials for semiconductor process integration and their applications

Thomas Mikolajick ^{1, 2}

Stefan Slesazeck ¹

Halid Mulaosmanovic ¹

Min Hyuk Park ³

Simon Fichtner ⁴

Patrick D. Lomenzo ¹

M Hoffmann ¹

U. Schroeder ¹

Hide authors affiliations Show authors affiliations: 4 affiliations

NaMLab gGmbH 1 , Noethnitzer Str. 64, D-01187 Dresden, Germany |

Institute of Semiconductors and Microsystems (IHM) 2 , TU Dresden, D-01062 Dresden, Germany |

School of Materials Science and Engineering, Pusan National University 3 , 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea |

⁴

Materials and Processes for Micro/Nanosystem Technologies, University of Kiel, Institute for Material Science 4 , Kaiserstr. 2, 24143 Kiel, Germany |

Publication type: Journal Article

Publication date: 2021-03-11

AIP Publishing

Journal of Applied Physics

scimago Q2

wos Q3

SJR: 0.580

CiteScore: 5.1

Impact factor: 2.5

ISSN: 00218979, 10897550

DOI: 10.1063/5.0037617

Copy DOI

General Physics and Astronomy

Abstract

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

Found

2 citations

Markeev Andrey

🥼

DSc in Engineering

109 publications, 3 039 citations, 5 reviews

h-index: 29

Moscow Institute of Physics and Technology

Research interests

Atomic layer deposition

Ferroelectrics based on hafnium oxide

High-k dielectrics

Neuromorphic devices

Oxide resistive memory

Transition metal dichalcogenides

Two-dimensional materials

2 citations

Chernikova Anna

48 publications, 1 882 citations, 11 reviews

h-index: 22

Moscow Institute of Physics and Technology

1 citation

Miakonkikh Andrew

🥼 🤝

PhD in Physics and Mathematics

147 publications, 597 citations, 65 reviews

h-index: 13

Institute of Physics and Technology of NRC «Kurchatov Institute»

1 citation

Danilovich Dmitry

🥼 🤝

PhD in Engineering

47 publications, 370 citations

h-index: 11

St. Petersburg State Technological Institute (Technical University)

1 citation

Popov Vladimir

245 publications, 1 431 citations, 1 review

h-index: 17

Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

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GOST Copy

Mikolajick T. et al. Next generation ferroelectric materials for semiconductor process integration and their applications // Journal of Applied Physics. 2021. Vol. 129. No. 10. p. 100901.

GOST all authors (up to 50) Copy

Mikolajick T., Slesazeck S., Mulaosmanovic H., Park M. H., Fichtner S., Lomenzo P. D., Hoffmann M., Schroeder U. Next generation ferroelectric materials for semiconductor process integration and their applications // Journal of Applied Physics. 2021. Vol. 129. No. 10. p. 100901.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1063/5.0037617

UR - https://doi.org/10.1063/5.0037617

TI - Next generation ferroelectric materials for semiconductor process integration and their applications

T2 - Journal of Applied Physics

AU - Mikolajick, Thomas

AU - Slesazeck, Stefan

AU - Mulaosmanovic, Halid

AU - Park, Min Hyuk

AU - Fichtner, Simon

AU - Lomenzo, Patrick D.

AU - Hoffmann, M

AU - Schroeder, U.

PY - 2021

DA - 2021/03/11

PB - AIP Publishing

SP - 100901

IS - 10

VL - 129

SN - 0021-8979

SN - 1089-7550

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2021_Mikolajick,

author = {Thomas Mikolajick and Stefan Slesazeck and Halid Mulaosmanovic and Min Hyuk Park and Simon Fichtner and Patrick D. Lomenzo and M Hoffmann and U. Schroeder},

title = {Next generation ferroelectric materials for semiconductor process integration and their applications},

journal = {Journal of Applied Physics},

year = {2021},

volume = {129},

publisher = {AIP Publishing},

month = {mar},

url = {https://doi.org/10.1063/5.0037617},

number = {10},

pages = {100901},

doi = {10.1063/5.0037617}

}

MLA

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MLA Copy

Mikolajick, Thomas, et al. “Next generation ferroelectric materials for semiconductor process integration and their applications.” Journal of Applied Physics, vol. 129, no. 10, Mar. 2021, p. 100901. https://doi.org/10.1063/5.0037617.

Publisher

AIP Publishing

Journal

Journal of Applied Physics

scimago Q2

wos Q3

SJR

0.580

CiteScore

5.1

Impact factor

2.5

ISSN

00218979 (Print)

10897550 (Electronic)

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