Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga₂O₃) wafers, having [Formula: see text], (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV ²⁸Si⁺-ions, applying fluences in the range of 1 × 10¹⁴–2 × 10¹⁶ Si/cm², unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted β-Ga₂O₃ is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having [Formula: see text] orientation were subjected to isochronal (30 min) anneals in the range of 300–1300 °C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 × 10¹⁶ Si/cm² and annealed at 1100 °C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.