Applied Physics Letters, volume 121, issue 26, pages 262101

High conductivity β-Ga2O3 formed by hot Si ion implantation

Publication typeJournal Article
Publication date2022-12-26
scimago Q1
wos Q2
SJR0.896
CiteScore6.1
Impact factor3.6
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

This work demonstrates the advantage of carrying out silicon ion (Si+) implantation at high temperatures for forming controlled heavily doped regions in gallium oxide. Room temperature (RT, 25 °C) and high temperature (HT, 600 °C) Si implants were carried out into MBE grown (010) β-Ga2O3 films to form ∼350 nm deep Si-doped layers with average concentrations up to ∼1.2 × 1020 cm−3. For such high concentrations, the RT sample was too resistive for measurement, but the HT samples had 82.1% Si dopant activation efficiency with a high sheet electron concentration of 3.3 × 1015 cm−2 and an excellent mobility of 92.8 cm2/V·s at room temperature. X-ray diffraction measurements indicate that HT implantation prevents the formation of other Ga2O3 phases and results in reduced structural defects and lattice damage. These results are highly encouraging for achieving ultra-low resistance heavily doped Ga2O3 layers using ion implantation.

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