Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

In this study, we investigated various approaches to manipulate the flake density, size, and thickness of two-dimensional transition metal dichalcogenides by independently tuning the precursors and process conditions of the metal–organic chemical vapor deposition system. Normally off device characteristics were realized for both the as-grown and transferred cases. Furthermore, we demonstrated the versatility of our growth method by applying it to several commonly used gate dielectric materials, such as SiO2, SiNx, and AlOx.