Applied Physics Letters, volume 123, issue 15

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

Thomas M. Hazard 1
W WOODS 1
D. Rosenberg 1
Rabindra Das 1
Cyrus F. Hirjibehedin 1
D. K. Kim 1
J.M. Knecht 1
J Mallek 1
A.J. Melville 1
Bethany Niedzielski 1
Kyle Serniak 1, 2
K. M. Sliwa 1
D Yost 1
J.L. Yoder 1
William William Oliver 1, 2, 3, 4
Mollie E. Schwartz 1
Show full list: 16 authors
Publication typeJournal Article
Publication date2023-10-09
scimago Q1
SJR0.976
CiteScore6.4
Impact factor3.5
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

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