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Open access
AIP Publishing
APL Materials
,  volume 12 ,  issue 1

Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]

Sushma Raghuvansy 1
, 
Jonathan McCandless 1, 2
, 
Marco Schowalter 1
, 
A Karg 1
, 
M. Alonso-Orts 1, 3
, 
Martin S Williams 1
, 
C. Tessarek 1
, 
Stephan Figge 1
, 
Kazuki Nomoto 2
, 
Huili Xing 2, 4, 5
, 
D. Schlom 4, 5, 6
, 
Andreas Rosenauer 1, 3
, 
Debdeep Jena 2, 4, 5
, 
Martin Eickhoff 1, 3
, 
P Vogt 1, 4
1
 
2
 
3
 
4
 
5
 
6
 
Publication type: Journal Article
Publication date: 2024-01-01
AIP Publishing
scimago Q1
wos Q2
SJR: 1.124
CiteScore: 7.9
Impact factor: 4.5
ISSN: 2166532X
General Materials Science
General Engineering
Found 

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Raghuvansy S. et al. Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] // APL Materials. 2024. Vol. 12. No. 1.
GOST all authors (up to 50) Copy
Raghuvansy S., McCandless J., Schowalter M., Karg A., Alonso-Orts M., Williams M. S., Tessarek C., Figge S., Nomoto K., Xing H., Schlom D., Rosenauer A., Jena D., Eickhoff M., Vogt P. Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] // APL Materials. 2024. Vol. 12. No. 1.
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TY - JOUR
DO - 10.1063/5.0192370
UR - https://doi.org/10.1063/5.0192370
TI - Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]
T2 - APL Materials
AU - Raghuvansy, Sushma
AU - McCandless, Jonathan
AU - Schowalter, Marco
AU - Karg, A
AU - Alonso-Orts, M.
AU - Williams, Martin S
AU - Tessarek, C.
AU - Figge, Stephan
AU - Nomoto, Kazuki
AU - Xing, Huili
AU - Schlom, D.
AU - Rosenauer, Andreas
AU - Jena, Debdeep
AU - Eickhoff, Martin
AU - Vogt, P
PY - 2024
DA - 2024/01/01
PB - AIP Publishing
IS - 1
VL - 12
SN - 2166-532X
ER -
BibTex
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@article{2024_Raghuvansy,
author = {Sushma Raghuvansy and Jonathan McCandless and Marco Schowalter and A Karg and M. Alonso-Orts and Martin S Williams and C. Tessarek and Stephan Figge and Kazuki Nomoto and Huili Xing and D. Schlom and Andreas Rosenauer and Debdeep Jena and Martin Eickhoff and P Vogt},
title = {Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]},
journal = {APL Materials},
year = {2024},
volume = {12},
publisher = {AIP Publishing},
month = {jan},
url = {https://doi.org/10.1063/5.0192370},
number = {1},
doi = {10.1063/5.0192370}
}