volume 125 issue 12

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Publication typeJournal Article
Publication date2024-09-16
scimago Q1
wos Q2
SJR0.896
CiteScore6.1
Impact factor3.6
ISSN00036951, 10773118
Abstract

We have investigated the origins of photoluminescence from quantum dot (QD) layers prepared by alternating depositions of sub-monolayers and a few monolayers of size-mismatched species, termed as sub-monolayer (SML) epitaxy, in comparison with their Stranski–Krastanov (SK) QD counterparts. Using measured nanostructure sizes and local In-compositions from local-electrode atom probe tomography as input into self-consistent Schrödinger–Poisson simulations, we compute the 3D confinement energies, probability densities, and photoluminescence (PL) spectra for both InAs/GaAs SML- and SK-QD layers. A comparison of the computed and measured PL spectra suggests one-dimensional electron confinement, with significant 3D hole localization in the SML-QD layers that contribute to their enhanced PL efficiency in comparison to their SK-QD counterparts.

Found 
Found 

Top-30

Journals

1
Applied Physics Letters
1 publication, 33.33%
Journal of Applied Physics
1 publication, 33.33%
1

Publishers

1
2
AIP Publishing
2 publications, 66.67%
SPIE-Intl Soc Optical Eng
1 publication, 33.33%
1
2
  • We do not take into account publications without a DOI.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
3
Share
Cite this
GOST |
Cite this
GOST Copy
Huang T. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers // Applied Physics Letters. 2024. Vol. 125. No. 12.
GOST all authors (up to 50) Copy
Huang T., Borrely T., Yang Y., Alzeidan A., Jacobsen G. M., Teodoro M. D., Quivy A., GOLDMAN R. F. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers // Applied Physics Letters. 2024. Vol. 125. No. 12.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1063/5.0219815
UR - https://pubs.aip.org/apl/article/125/12/122108/3313153/Influence-of-carrier-localization-on
TI - Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers
T2 - Applied Physics Letters
AU - Huang, T.-Y.
AU - Borrely, T.
AU - Yang, Y.-C.
AU - Alzeidan, A.
AU - Jacobsen, G M
AU - Teodoro, M D
AU - Quivy, A.A
AU - GOLDMAN, R. F.
PY - 2024
DA - 2024/09/16
PB - AIP Publishing
IS - 12
VL - 125
SN - 0003-6951
SN - 1077-3118
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2024_Huang,
author = {T.-Y. Huang and T. Borrely and Y.-C. Yang and A. Alzeidan and G M Jacobsen and M D Teodoro and A.A Quivy and R. F. GOLDMAN},
title = {Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers},
journal = {Applied Physics Letters},
year = {2024},
volume = {125},
publisher = {AIP Publishing},
month = {sep},
url = {https://pubs.aip.org/apl/article/125/12/122108/3313153/Influence-of-carrier-localization-on},
number = {12},
doi = {10.1063/5.0219815}
}