Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
X. Q. Guo
1
,
Fujun Xu
1
,
J Lang
1
,
Jiaming Wang
1
,
L.S. Zhang
1, 2
,
C. Ji
1
,
C. Z. Ji
1
,
Z. Y. Zhang
1
,
F. Y. Tan
1
,
Y. Wu
1
,
X. N. Kang
1
,
Xuelin Yang
1
,
Ning Tang
1
,
Xinqiang Wang Xinqiang Wang
1, 3, 4
,
Weikun Ge
1
,
B. Shen
1, 3, 4
2
Beijing SinoGaN Semiconductor Technology Co., Ltd 2 ., Beijing 101399,
|
3
4
Collaborative Innovation Center of Quantum Matter 4 , Beijing 100871,
|
Publication type: Journal Article
Publication date: 2025-02-24
scimago Q1
wos Q2
SJR: 0.896
CiteScore: 6.1
Impact factor: 3.6
ISSN: 00036951, 10773118
Abstract
The effects of the radio frequency (RF) bias power of inductively coupled plasma etching on the electrical properties of n-type Ohmic contact have been investigated. By reducing the RF bias power, a high-quality n-type Ohmic contact has been achieved on n-Al0.70Ga0.30N, with a specific contact resistivity of 1.2 × 10−4 Ω cm2. It is confirmed that low-power etching introduces fewer acceptor-state defects on the etched surface, which not only reduces the compensation for electrons but also reduces the degree of oxidation on the etched surface, providing favorable conditions for improving the electrical properties of metal–semiconductor contacts.
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Guo X. Q. et al. Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN // Applied Physics Letters. 2025. Vol. 126. No. 8.
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Guo X. Q., Xu F., Lang J., Wang J., Zhang L., Ji C., Ji C. Z., Zhang Z. Y., Tan F. Y., Wu Y., Kang X. N., Yang X., Tang N., Xinqiang Wang X. W., Ge W., Shen B. Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN // Applied Physics Letters. 2025. Vol. 126. No. 8.
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TY - JOUR
DO - 10.1063/5.0221287
UR - https://pubs.aip.org/apl/article/126/8/082104/3337014/Effects-of-the-RF-bias-power-of-ICP-etching-on-the
TI - Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
T2 - Applied Physics Letters
AU - Guo, X. Q.
AU - Xu, Fujun
AU - Lang, J
AU - Wang, Jiaming
AU - Zhang, L.S.
AU - Ji, C.
AU - Ji, C. Z.
AU - Zhang, Z. Y.
AU - Tan, F. Y.
AU - Wu, Y.
AU - Kang, X. N.
AU - Yang, Xuelin
AU - Tang, Ning
AU - Xinqiang Wang, Xinqiang Wang
AU - Ge, Weikun
AU - Shen, B.
PY - 2025
DA - 2025/02/24
PB - AIP Publishing
IS - 8
VL - 126
SN - 0003-6951
SN - 1077-3118
ER -
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@article{2025_Guo,
author = {X. Q. Guo and Fujun Xu and J Lang and Jiaming Wang and L.S. Zhang and C. Ji and C. Z. Ji and Z. Y. Zhang and F. Y. Tan and Y. Wu and X. N. Kang and Xuelin Yang and Ning Tang and Xinqiang Wang Xinqiang Wang and Weikun Ge and B. Shen},
title = {Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN},
journal = {Applied Physics Letters},
year = {2025},
volume = {126},
publisher = {AIP Publishing},
month = {feb},
url = {https://pubs.aip.org/apl/article/126/8/082104/3337014/Effects-of-the-RF-bias-power-of-ICP-etching-on-the},
number = {8},
doi = {10.1063/5.0221287}
}
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