Applied Physics Letters, volume 126, issue 8

Electron thermometry for Si MOS inversion layer using proximity nano-transistor and its application to Joule-heating experiment

Publication typeJournal Article
Publication date2025-02-24
scimago Q1
wos Q2
SJR0.896
CiteScore6.1
Impact factor3.6
ISSN00036951, 10773118
Abstract

A method for measuring the electron temperature in the inversion layer of Si metal-oxide-semiconductor structures is presented. This technique utilizes a nano-transistor as a thermometer, placed in close proximity to the inversion layer under investigation, enabling measurements of the electron temperature for values above approximately 10 K. When applied to Joule-heating experiments, this method reveals a notable discrepancy between the measurement results and predictions made by the conventional theory based on the deformation-potential coupling with low-energy acoustic phonons. Specifically, the injected-power dependence of the electron temperature is much weaker than expected. The results strongly suggest that another mechanism causing a significant electron energy loss plays a role.

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