Isovalent substitution-induced pseudodoping in ZrxTi1−xSe2 transition metal dichalcogenides

The crystal and electronic structure of ZrxTi1−xSe2 (0 < x < 1) compounds and their electrical resistivity have been studied in detail for the first time. A combination of soft x-ray spectroscopic methods (XPS, XAS, and ResPES) was used to investigate the electronic structure. The lattice parameters as a function of the metal concentration x obey Vegard’s law. It was shown that the substitution of Ti by Zr results in an increase in the Fermi energy, attributed to the lower binding energy of Zr 4d compared to Ti 3d in the ZrxTi1−xSe2 valence band. Given that the oxidation states of both Ti and Zr are +4, and the concentration of free charge carriers remains unchanged upon substitution, the observed effect is explained by a reduced density of electronic states near the Fermi level. The influence of temperature on the Ti 2p–3d and Zr 3p–4d ResPES spectra is interpreted in terms of pseudodoping occurring with the substitution of Ti by Zr.