Applied Physics Letters, volume 86, issue 11, pages 113102
Controlling the properties of InGaAs quantum dots by selective-area epitaxy
Publication type: Journal Article
Publication date: 2005-03-08
Journal:
Applied Physics Letters
Q1
Q2
SJR: 0.976
CiteScore: 6.4
Impact factor: 3.5
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract
Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.
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Mokkapati S. et al. Controlling the properties of InGaAs quantum dots by selective-area epitaxy // Applied Physics Letters. 2005. Vol. 86. No. 11. p. 113102.
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Mokkapati S., Lever P., Tan H. H., JAGADISH C., Mcbean K. E., PHILLIPS M. R. Controlling the properties of InGaAs quantum dots by selective-area epitaxy // Applied Physics Letters. 2005. Vol. 86. No. 11. p. 113102.
Cite this
RIS
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TY - JOUR
DO - 10.1063/1.1875745
UR - https://doi.org/10.1063/1.1875745
TI - Controlling the properties of InGaAs quantum dots by selective-area epitaxy
T2 - Applied Physics Letters
AU - Mokkapati, S.
AU - Lever, P.
AU - Tan, H. H.
AU - JAGADISH, C.
AU - Mcbean, K E
AU - PHILLIPS, M. R.
PY - 2005
DA - 2005/03/08
PB - AIP Publishing
SP - 113102
IS - 11
VL - 86
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2005_Mokkapati,
author = {S. Mokkapati and P. Lever and H. H. Tan and C. JAGADISH and K E Mcbean and M. R. PHILLIPS},
title = {Controlling the properties of InGaAs quantum dots by selective-area epitaxy},
journal = {Applied Physics Letters},
year = {2005},
volume = {86},
publisher = {AIP Publishing},
month = {mar},
url = {https://doi.org/10.1063/1.1875745},
number = {11},
pages = {113102},
doi = {10.1063/1.1875745}
}
Cite this
MLA
Copy
Mokkapati, S., et al. “Controlling the properties of InGaAs quantum dots by selective-area epitaxy.” Applied Physics Letters, vol. 86, no. 11, Mar. 2005, p. 113102. https://doi.org/10.1063/1.1875745.