Journal of Applied Physics, volume 98, issue 8, pages 83514

Strong enhancement of band-edge photoluminescence in CdS quantum dots prepared by a reverse-micelle method

Publication typeJournal Article
Publication date2005-10-15
scimago Q2
SJR0.649
CiteScore5.4
Impact factor2.7
ISSN00218979, 10897550
General Physics and Astronomy
Abstract

We have investigated the effects of surface modification on photoluminescence (PL) properties of CdS quantum dots (QDs) prepared by a reverse-micelle method. It is demonstrated that the modification of QD surface with a Cd(OH)2 layer leads to a strong enhancement of the band-edge PL intensity of CdS QDs in reverse micelles. The PL-decay profile before the surface modification exhibits a fast decay component less than 50ps. After the modification, the fast-decay component disappears. The drastic change of the PL-decay profiles before and after the surface modification corresponds to the marked increase of the PL intensity. This suggests that the strong enhancement of the band-edge PL intensity originates from the remarkable reduction of nonradiative recombination processes, which usually result in a very short decay time, due to surface defects of QDs.

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