Journal of Applied Physics, volume 86, issue 7, pages 3721-3728

Temperature quenching of photoluminescence intensities in undoped and doped GaN

M. Leroux ¹

N. GRANDJEAN ¹

B. Beaumont ¹

G. NATAF ¹

F. Semond ¹

J. Massies ¹

P. Gibart ¹

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Centre de Recherches sur l’ Hétéro-Epitaxie et ses Applications-CNRS, Sophia Antipolis, Rue B. Grégory, 06560 Valbonne, France |

Publication type: Journal Article

Publication date: 1999-10-01

American Institute of Physics (AIP)

Journal: Journal of Applied Physics

Quartile SCImago

Quartile WOS

Impact factor: 3.2

ISSN: 00218979, 10897550

DOI: 10.1063/1.371242

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General Physics and Astronomy

Abstract

This work discusses the temperature behavior of the various photoluminescence (PL) transitions observed in undoped, n- and p-doped GaN in the 9-300 K range. Samples grown using different techniques have been assessed. When possible, simple rate equations are used to describe the quenching of the transitions observed, in order to get a better insight on the mechanism involved. In undoped GaN, the temperature dependence of band edge excitonic lines is well described by assuming that the A exciton population is the leading term in the 50-300 K range. The activation energy for free exciton luminescence quenching is of the order of the A rydberg, suggesting that free hole release leads to nonradiative recombination. In slightly p-doped samples, the luminescence is dominated by acceptor related transitions, whose intensity is shown to be governed by free hole release. For high Mg doping, the luminescence at room temperature is dominated by blue PL in the 2.8-2.9 eV range, whose quenching activation energy is in the 60-80 meV range. We also discuss the temperature dependence of PL transitions near 3.4 eV, related to extended structural defects. (C) 1999 American Institute of Physics. [S0021-8979(99)05619-4].

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MRS Proceedings	MRS Proceedings, 7, 1.54% MRS Proceedings 7 publications, 1.54%
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Citations by publishers

	20 40 60 80 100 120
American Institute of Physics (AIP)	American Institute of Physics (AIP), 119, 26.1% American Institute of Physics (AIP) 119 publications, 26.1%
Elsevier	Elsevier, 88, 19.3% Elsevier 88 publications, 19.3%
Wiley	Wiley, 37, 8.11% Wiley 37 publications, 8.11%
Springer Nature	Springer Nature, 34, 7.46% Springer Nature 34 publications, 7.46%
IOP Publishing	IOP Publishing, 34, 7.46% IOP Publishing 34 publications, 7.46%
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Materials Research Society	Materials Research Society, 11, 2.41% Materials Research Society 11 publications, 2.41%
Japan Society of Applied Physics	Japan Society of Applied Physics, 9, 1.97% Japan Society of Applied Physics 9 publications, 1.97%
IEEE	IEEE, 8, 1.75% IEEE 8 publications, 1.75%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 6, 1.32% Multidisciplinary Digital Publishing Institute (MDPI) 6 publications, 1.32%
EDP Sciences	EDP Sciences, 2, 0.44% EDP Sciences 2 publications, 0.44%
The Electrochemical Society	The Electrochemical Society, 2, 0.44% The Electrochemical Society 2 publications, 0.44%
Pleiades Publishing	Pleiades Publishing, 2, 0.44% Pleiades Publishing 2 publications, 0.44%
American Vacuum Society	American Vacuum Society, 1, 0.22% American Vacuum Society 1 publication, 0.22%
Cambridge University Press	Cambridge University Press, 1, 0.22% Cambridge University Press 1 publication, 0.22%
Trans Tech Publications	Trans Tech Publications, 1, 0.22% Trans Tech Publications 1 publication, 0.22%
Chinese Physical Society	Chinese Physical Society, 1, 0.22% Chinese Physical Society 1 publication, 0.22%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 0.22% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 0.22%
	20 40 60 80 100 120

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GOST Copy

Leroux M. et al. Temperature quenching of photoluminescence intensities in undoped and doped GaN // Journal of Applied Physics. 1999. Vol. 86. No. 7. pp. 3721-3728.

GOST all authors (up to 50) Copy

Leroux M., GRANDJEAN N., Beaumont B., NATAF G., Semond F., Massies J., Gibart P. Temperature quenching of photoluminescence intensities in undoped and doped GaN // Journal of Applied Physics. 1999. Vol. 86. No. 7. pp. 3721-3728.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/1.371242

UR - https://doi.org/10.1063/1.371242

TI - Temperature quenching of photoluminescence intensities in undoped and doped GaN

T2 - Journal of Applied Physics

AU - Leroux, M.

AU - GRANDJEAN, N.

AU - Beaumont, B.

AU - NATAF, G.

AU - Semond, F.

AU - Massies, J.

AU - Gibart, P.

PY - 1999

DA - 1999/10/01 00:00:00

PB - American Institute of Physics (AIP)

SP - 3721-3728

IS - 7

VL - 86

SN - 0021-8979

SN - 1089-7550

ER -

BibTex |

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BibTex Copy

@article{1999_Leroux,

author = {M. Leroux and N. GRANDJEAN and B. Beaumont and G. NATAF and F. Semond and J. Massies and P. Gibart},

title = {Temperature quenching of photoluminescence intensities in undoped and doped GaN},

journal = {Journal of Applied Physics},

year = {1999},

volume = {86},

publisher = {American Institute of Physics (AIP)},

month = {oct},

url = {https://doi.org/10.1063/1.371242},

number = {7},

pages = {3721--3728},

doi = {10.1063/1.371242}

}

MLA

Cite this

MLA Copy

Leroux, M., et al. “Temperature quenching of photoluminescence intensities in undoped and doped GaN.” Journal of Applied Physics, vol. 86, no. 7, Oct. 1999, pp. 3721-3728. https://doi.org/10.1063/1.371242.

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Publisher

American Institute of Physics (AIP)

Journal

Journal of Applied Physics

Quartile SCImago

Quartile WOS

Impact factor

3.2

ISSN

00218979 (Print)
10897550 (Electronic)