Journal of Applied Physics, volume 86, issue 8, pages 4403-4411
Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films
R. Pässler
1
,
E. Griebl
2
,
H Riepl
2
,
G Lautner
2
,
S. Bauer
2
,
H. Preis
2
,
W. Gebhardt
2
,
B. Buda
3
,
D.J. As
3
,
D. Schikora
3
,
K. Lischka
3
,
K. Papagelis
4
,
S Ves
4
Publication type: Journal Article
Publication date: 1999-10-15
Journal:
Journal of Applied Physics
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 3.2
ISSN: 00218979, 10897550
DOI:
10.1063/1.371378
General Physics and Astronomy
Abstract
High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on (001)-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E1s(T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E1s(T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E1s(T) data sets for cubic ZnS, are discussed.
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Citations by publishers
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Pässler R. et al. Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films // Journal of Applied Physics. 1999. Vol. 86. No. 8. pp. 4403-4411.
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Pässler R., Griebl E., Riepl H., Lautner G., Bauer S., Preis H., Gebhardt W., Buda B., As D., Schikora D., Lischka K., Papagelis K., Ves S. Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films // Journal of Applied Physics. 1999. Vol. 86. No. 8. pp. 4403-4411.
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TY - JOUR
DO - 10.1063/1.371378
UR - https://doi.org/10.1063/1.371378
TI - Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films
T2 - Journal of Applied Physics
AU - Pässler, R.
AU - Griebl, E.
AU - Riepl, H
AU - Lautner, G
AU - Bauer, S.
AU - Preis, H.
AU - Gebhardt, W.
AU - Buda, B.
AU - As, D.J.
AU - Schikora, D.
AU - Lischka, K.
AU - Papagelis, K.
AU - Ves, S
PY - 1999
DA - 1999/10/15 00:00:00
PB - American Institute of Physics (AIP)
SP - 4403-4411
IS - 8
VL - 86
SN - 0021-8979
SN - 1089-7550
ER -
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@article{1999_Pässler,
author = {R. Pässler and E. Griebl and H Riepl and G Lautner and S. Bauer and H. Preis and W. Gebhardt and B. Buda and D.J. As and D. Schikora and K. Lischka and K. Papagelis and S Ves},
title = {Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films},
journal = {Journal of Applied Physics},
year = {1999},
volume = {86},
publisher = {American Institute of Physics (AIP)},
month = {oct},
url = {https://doi.org/10.1063/1.371378},
number = {8},
pages = {4403--4411},
doi = {10.1063/1.371378}
}
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Pässler, R., et al. “Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films.” Journal of Applied Physics, vol. 86, no. 8, Oct. 1999, pp. 4403-4411. https://doi.org/10.1063/1.371378.