Applied Physics Letters, volume 100, issue 17, pages 173109
Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency
1
RTI International, Research Triangle Park , North Carolina 27709, USA
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Publication type: Journal Article
Publication date: 2012-04-23
Journal:
Applied Physics Letters
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor: 4
ISSN: 00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract
Of interest for both photovoltaic and photodetector applications is the ability of colloidal quantum dot (CQD) devices to provide response further into the infrared than is typical for other solution-processable materials. Here, we present a simple heterojunction diode structure that utilizes the extended infrared absorption of PbS CQDs. We show that device performance benefits from a discontinuous exciton blocking layer which improves charge separation without limiting charge extraction. By enhancing charge carrier mobility in the CQD layer, we demonstrate a planar heterostructure device with a power conversion efficiency of 5.2% under 1 sun illumination.
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Citations by publishers
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Springer Nature
8 publications, 25.81%
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American Chemical Society (ACS)
4 publications, 12.9%
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2 publications, 6.45%
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Elsevier
2 publications, 6.45%
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Wiley
2 publications, 6.45%
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SPIE
2 publications, 6.45%
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Pleiades Publishing
1 publication, 3.23%
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IEEE
1 publication, 3.23%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 3.23%
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Klem E. J. D. et al. Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency // Applied Physics Letters. 2012. Vol. 100. No. 17. p. 173109.
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Klem E. J. D., Gregory C. W., Cunningham G. B., Hall S., Temple D. S., LEWIS J. S. Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency // Applied Physics Letters. 2012. Vol. 100. No. 17. p. 173109.
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TY - JOUR
DO - 10.1063/1.4707377
UR - https://doi.org/10.1063/1.4707377
TI - Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency
T2 - Applied Physics Letters
AU - Klem, E J D
AU - Gregory, C W
AU - Cunningham, G B
AU - Hall, S.
AU - Temple, D S
AU - LEWIS, J S
PY - 2012
DA - 2012/04/23 00:00:00
PB - American Institute of Physics (AIP)
SP - 173109
IS - 17
VL - 100
SN - 0003-6951
SN - 1077-3118
ER -
Cite this
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@article{2012_Klem,
author = {E J D Klem and C W Gregory and G B Cunningham and S. Hall and D S Temple and J S LEWIS},
title = {Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency},
journal = {Applied Physics Letters},
year = {2012},
volume = {100},
publisher = {American Institute of Physics (AIP)},
month = {apr},
url = {https://doi.org/10.1063/1.4707377},
number = {17},
pages = {173109},
doi = {10.1063/1.4707377}
}
Cite this
MLA
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Klem, E. J. D., et al. “Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency.” Applied Physics Letters, vol. 100, no. 17, Apr. 2012, p. 173109. https://doi.org/10.1063/1.4707377.