Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique

Quinquethiophene-based monolayer organic field-effect transistors (OFETs) prepared by Langmuir-Blodgett (LB) technique show hole mobilities up to 10−2 cm2/Vs and On/Off ratios up to 106. Functional logic LB monolayer devices operating in air have been demonstrated. The performance of LB OFETs is comparable to self-assembled monolayer field-effect transistors (SAMFETs) devices prepared by self-assembly from solution using the same organosilicon oligothiophene despite the LB OFET monolayer is weakly bounded to the dielectric surface. Taking into account that the LB technique is a fast and rather easy process, these findings highlight a high potential of LB technique for ultrathin organic electronics.