Helium ion beam enhanced local etching of silicon nitride

Тип публикации: Proceedings Article
Дата публикации: 2016-06-18
AIP Publishing
SJR: 0.153
CiteScore: 0.5
Impact factor: —
ISSN: 0094243X, 15517616
Краткое описание
We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 1014 cm−2 to 1017 cm−2 was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.
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Nanotechnology
Nanotechnology, 1, 50%
Nanotechnology
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1, 50%
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Petrov Yu. V., Sharov T. V., Baraban A. Helium ion beam enhanced local etching of silicon nitride // AIP Conference Proceedings. 2016. Vol. 1748.
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Petrov Yu. V., Sharov T. V., Baraban A. Helium ion beam enhanced local etching of silicon nitride // AIP Conference Proceedings. 2016. Vol. 1748.
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TY - CPAPER
DO - 10.1063/1.4954350
UR - https://doi.org/10.1063/1.4954350
TI - Helium ion beam enhanced local etching of silicon nitride
T2 - AIP Conference Proceedings
AU - Petrov, Yu V
AU - Sharov, T V
AU - Baraban, A.P.
PY - 2016
DA - 2016/06/18
PB - AIP Publishing
VL - 1748
SN - 0094-243X
SN - 1551-7616
ER -
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@inproceedings{2016_Petrov,
author = {Yu V Petrov and T V Sharov and A.P. Baraban},
title = {Helium ion beam enhanced local etching of silicon nitride},
year = {2016},
volume = {1748},
month = {jun},
publisher = {AIP Publishing}
}