volume 126 issue 17 pages 175702

Impurity-assisted terahertz photoluminescence in compensated quantum wells

Publication typeJournal Article
Publication date2019-11-06
scimago Q2
wos Q3
SJR0.580
CiteScore5.1
Impact factor2.5
ISSN00218979, 10897550
General Physics and Astronomy
Abstract
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.
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Makhov I. S. et al. Impurity-assisted terahertz photoluminescence in compensated quantum wells // Journal of Applied Physics. 2019. Vol. 126. No. 17. p. 175702.
GOST all authors (up to 50) Copy
Makhov I. S., Panevin V., FIRSOV D. A., VOROBJEV L. E., Klimko G. V. Impurity-assisted terahertz photoluminescence in compensated quantum wells // Journal of Applied Physics. 2019. Vol. 126. No. 17. p. 175702.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1063/1.5121835
UR - https://doi.org/10.1063/1.5121835
TI - Impurity-assisted terahertz photoluminescence in compensated quantum wells
T2 - Journal of Applied Physics
AU - Makhov, Ivan S.
AU - Panevin, V.Yu.
AU - FIRSOV, D. A.
AU - VOROBJEV, L. E.
AU - Klimko, G V
PY - 2019
DA - 2019/11/06
PB - AIP Publishing
SP - 175702
IS - 17
VL - 126
SN - 0021-8979
SN - 1089-7550
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2019_Makhov,
author = {Ivan S. Makhov and V.Yu. Panevin and D. A. FIRSOV and L. E. VOROBJEV and G V Klimko},
title = {Impurity-assisted terahertz photoluminescence in compensated quantum wells},
journal = {Journal of Applied Physics},
year = {2019},
volume = {126},
publisher = {AIP Publishing},
month = {nov},
url = {https://doi.org/10.1063/1.5121835},
number = {17},
pages = {175702},
doi = {10.1063/1.5121835}
}
MLA
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MLA Copy
Makhov, Ivan S., et al. “Impurity-assisted terahertz photoluminescence in compensated quantum wells.” Journal of Applied Physics, vol. 126, no. 17, Nov. 2019, p. 175702. https://doi.org/10.1063/1.5121835.