Applied Physics Letters, volume 47, issue 10, pages 1099-1101

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

L. GOLDSTEIN 1
F. Glas 1
J.Y Marzin 1
M.N. Charasse 1
G. Le Roux 1
1
 
Centre National d’Etudes des Telecommunications, 196 rue de Paris, 92220 France
Publication typeJournal Article
Publication date1985-11-15
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor4
ISSN00036951, 10773118
Physics and Astronomy (miscellaneous)
Abstract

InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.

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GOST |
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GOLDSTEIN L. et al. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices // Applied Physics Letters. 1985. Vol. 47. No. 10. pp. 1099-1101.
GOST all authors (up to 50) Copy
GOLDSTEIN L., Glas F., Marzin J., Charasse M., Le Roux G. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices // Applied Physics Letters. 1985. Vol. 47. No. 10. pp. 1099-1101.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1063/1.96342
UR - https://doi.org/10.1063/1.96342
TI - Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
T2 - Applied Physics Letters
AU - GOLDSTEIN, L.
AU - Glas, F.
AU - Marzin, J.Y
AU - Charasse, M.N.
AU - Le Roux, G.
PY - 1985
DA - 1985/11/15 00:00:00
PB - American Institute of Physics (AIP)
SP - 1099-1101
IS - 10
VL - 47
SN - 0003-6951
SN - 1077-3118
ER -
BibTex |
Cite this
BibTex Copy
@article{1985_GOLDSTEIN,
author = {L. GOLDSTEIN and F. Glas and J.Y Marzin and M.N. Charasse and G. Le Roux},
title = {Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices},
journal = {Applied Physics Letters},
year = {1985},
volume = {47},
publisher = {American Institute of Physics (AIP)},
month = {nov},
url = {https://doi.org/10.1063/1.96342},
number = {10},
pages = {1099--1101},
doi = {10.1063/1.96342}
}
MLA
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MLA Copy
GOLDSTEIN, L., et al. “Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices.” Applied Physics Letters, vol. 47, no. 10, Nov. 1985, pp. 1099-1101. https://doi.org/10.1063/1.96342.
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