Pulsed laser deposition of gallium nitride thin films on sapphire substrates

Publication type: Proceedings Article
Publication date: 2020-12-09
AIP Publishing
SJR: 0.153
CiteScore: 0.5
Impact factor: —
ISSN: 0094243X, 15517616
Abstract
The results of an experimental study of the surface morphology and structural properties of thin films of gallium nitride on sapphire obtained by pulsed laser deposition are presented. Pulse laser sputtering of gallium nitride films was carried out by sputtering a liquid gallium target in an atmosphere of nitrogen and argon. Using scanning electron microscopy and energy dispersive analysis, it was found that thin gallium nitride films obtained at a fluence of 0.75 J/cm2 have a composition close to stoichiometric. It was determined that a decrease in fluence during pulsed laser deposition of thin gallium nitride films on sapphire reduces the arithmetic average surface roughness to 0.891 nm. films.
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GOST Copy
Devitsky O. et al. Pulsed laser deposition of gallium nitride thin films on sapphire substrates // AIP Conference Proceedings. 2020.
GOST all authors (up to 50) Copy
Devitsky O., Nikulin D. A., Sysoev I. Pulsed laser deposition of gallium nitride thin films on sapphire substrates // AIP Conference Proceedings. 2020.
RIS |
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RIS Copy
TY - CPAPER
DO - 10.1063/5.0032227
UR - https://doi.org/10.1063/5.0032227
TI - Pulsed laser deposition of gallium nitride thin films on sapphire substrates
T2 - AIP Conference Proceedings
AU - Devitsky, O.V.
AU - Nikulin, D. A.
AU - Sysoev, I.A.
PY - 2020
DA - 2020/12/09
PB - AIP Publishing
SN - 0094-243X
SN - 1551-7616
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@inproceedings{2020_Devitsky,
author = {O.V. Devitsky and D. A. Nikulin and I.A. Sysoev},
title = {Pulsed laser deposition of gallium nitride thin films on sapphire substrates},
year = {2020},
month = {dec},
publisher = {AIP Publishing}
}