In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

Ultra-thin silver films of thicknesses of the order of 10 nm and less were prepared in different ambient conditions (vacuum, Ar, and N2) by pulsed laser deposition on glass and fused silica substrates. The in situ monitoring of electrical resistance of deposited films and optical emission spectroscopy of plasma were implemented as real-time analysis techniques. Change in the growth mechanism of the Ag layer in N2 ambient is expressed by an acceleration of the coalescence process, which shifts the percolation point toward lower mass thicknesses. The films prepared in vacuum and Ar ambient were found to be unstable for a final resistance in the range from 1 to 100 MΩ while the films deposited in N2 revealed stable electrical resistance. The percolation point was further lowered by introducing a sublayer of AgxOy for the film deposited in N2 gas. Based on data provided by AFM, SEM, and spectroscopic ellipsometry, different film formation mechanisms are discussed in relation to surface morphology and optical properties. Optical emission spectroscopy was used to monitor the deposition process and identify the species presented during the deposition process. The energy of the ejected particle is affected by the addition of ambient gas and depends on the properties of the working gas.