Open Access

APL Materials

, volume 9 , issue 12 , pages 121104

Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Petr I. Lazarenko ¹

Vadim Kovalyuk ^{2, 3}

Pavel An ^{2, 3}

Aleksey Prokhodtsov ⁴

Alexander Golikov ^{1, 2}

Aleksey Sherchenkov ¹

Sergey A. Kozyukhin ^{5, 6}

Ilia Fradkin ^{7, 8}

Galina Chulkova ^{2, 3}

Gregory Goltsman ^{4, 9}

Hide authors affiliations Show authors affiliations: 9 affiliations

Institute of Advanced Materials and Technologies, National Research University of Electronic Technology 1 , Zelenograd 124498, Russia |

Department of Physics, Moscow Pedagogical State University 2 , Moscow 119435, Russia |

Russian Quantum Center 3 , Skolkovo 143025, Moscow, Russia |

⁴

National Research University Higher School of Economics 4 , Moscow 101000, Russia |

⁵

Kurnakov Institute of General and Inorganic Chemistry of the RAS 5 , Moscow 119991, Russia |

⁶

National Research Tomsk State University 6 , 36, Lenin Prospect, Tomsk, Russia |

⁷

Skolkovo Institute of Science and Technology 7 , Bolshoy Boulevard 30, Moscow 121205, Russia |

⁸

Moscow Institute of Physics and Technology 8 , Institutskiy Pereulok 9, Moscow Region 141701, Russia |

⁹

NTI Center for Quantum Communications, National University of Science and Technology MISiS 9 , Leninsky prospekt 4, Moscow 119049, Russia |

Publication type: Journal Article

Publication date: 2021-12-01

AIP Publishing

APL Materials

scimago Q1

wos Q2

SJR: 1.124

CiteScore: 7.9

Impact factor: 4.5

ISSN: 2166532X

DOI: 10.1063/5.0066387

Copy DOI

General Materials Science

General Engineering

Abstract

We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thicknesses and lengths and have also measured transmission spectra O-ring resonators for GST cells of various length and phase states. An analysis of the changes in the Q-factors has enabled us to identify the region of the GST cells where light scattering and absorption dominate and find the size dependence of amorphous and crystalline GST attenuation coefficients. The demonstrated results pave the way to high energy-efficient on-chip devices of a small footprint that can be switched either optically or electrically.

Found

5 citations

Lazarenko Petr

PhD in Engineering

82 publications, 497 citations

h-index: 14

National Research University of Electronic Technology

Research interests

Condensed matter physics

Laser processing of materials

4 citations

Kozyukhin Sergey

🥼 🤝

DSc in Chemistry, professor

194 publications, 1 512 citations, 2 reviews

h-index: 20

Moscow Institute of Physics and Technology

Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences

3 citations

Kovalyuk Vadim

PhD in Physics and Mathematics

87 publications, 873 citations

h-index: 13

National Research University Higher School of Economics

National University of Science & Technology (MISiS)

Moscow Pedagogical State University

Russian Quantum Center

1 citation

Yakubov Alexey

🥼 🤝

PhD in Engineering

29 publications, 118 citations

h-index: 7

National Research University of Electronic Technology

1 citation

Fradkin Ilia

PhD in Physics and Mathematics

22 publications, 158 citations

h-index: 8

Moscow Institute of Physics and Technology

Skolkovo Institute of Science and Technology

1 citation

Dubkov Sergey

🤝

PhD in Engineering

71 publications, 490 citations, 2 reviews

h-index: 12

National Research University of Electronic Technology

Research interests

Carbon materials

Filamentous nanocrystals

Hydrothermal synthesis

1 citation

Fedyanina Mariya

14 publications, 36 citations

h-index: 3

National Research University of Electronic Technology

Research interests

Phase transformations in materials

Semiconductor Materials Science

1 citation

Smirnov Petr

3 publications, 4 citations

h-index: 1

P.N. Lebedev Physical Institute of the Russian Academy of Sciences

National Research University of Electronic Technology

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Lazarenko P. I. et al. Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient // APL Materials. 2021. Vol. 9. No. 12. p. 121104.

GOST all authors (up to 50) Copy

Lazarenko P. I., Kovalyuk V., An P., Prokhodtsov A., Golikov A., Sherchenkov A., Kozyukhin S. A., Fradkin I., Chulkova G., Goltsman G. Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient // APL Materials. 2021. Vol. 9. No. 12. p. 121104.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1063/5.0066387

UR - https://doi.org/10.1063/5.0066387

TI - Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient

T2 - APL Materials

AU - Lazarenko, Petr I.

AU - Kovalyuk, Vadim

AU - An, Pavel

AU - Prokhodtsov, Aleksey

AU - Golikov, Alexander

AU - Sherchenkov, Aleksey

AU - Kozyukhin, Sergey A.

AU - Fradkin, Ilia

AU - Chulkova, Galina

AU - Goltsman, Gregory

PY - 2021

DA - 2021/12/01

PB - AIP Publishing

SP - 121104

IS - 12

VL - 9

SN - 2166-532X

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2021_Lazarenko,

author = {Petr I. Lazarenko and Vadim Kovalyuk and Pavel An and Aleksey Prokhodtsov and Alexander Golikov and Aleksey Sherchenkov and Sergey A. Kozyukhin and Ilia Fradkin and Galina Chulkova and Gregory Goltsman},

title = {Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient},

journal = {APL Materials},

year = {2021},

volume = {9},

publisher = {AIP Publishing},

month = {dec},

url = {https://doi.org/10.1063/5.0066387},

number = {12},

pages = {121104},

doi = {10.1063/5.0066387}

}

MLA

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MLA Copy

Lazarenko, Petr I., et al. “Size effect of the Ge2Sb2Te5cell atop the silicon nitride O-ring resonator on the attenuation coefficient.” APL Materials, vol. 9, no. 12, Dec. 2021, p. 121104. https://doi.org/10.1063/5.0066387.

Publisher

AIP Publishing

Journal

APL Materials

scimago Q1

wos Q2

SJR

1.124

CiteScore

7.9

Impact factor

4.5

ISSN

2166532X (Print, Electronic)

Labs

Colour Centre IGIС RAS

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