Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures

We report a technique for studying the absorption of optical radiation in layers of a semiconductor heterostructure by the method of probe radiation coupling. The studies are carried out using specially made isotype samples based on AlGaAs/GaAs, simulating an n-type doped laser waveguide with a concentration of 10¹⁷ – 10¹⁸cm⁻³. The main features of the experimental setup and calculation methods are described. A high (up to 95%) efficiency of light coupling into the waveguide and an error in measuring the absorption coefficient at a level of 0.1 cm⁻¹ are achieved. The possibilities of studying the polarisation and temperature dependences of radiation absorption by free carriers are experimentally demonstrated. It is shown that with an increase in temperature in the range 25 – 85°C, the absorption in the samples increases by 15%.