InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics
Тип публикации: Journal Article
Дата публикации: 2021-10-01
scimago Q3
БС2
SJR: 0.233
CiteScore: —
Impact factor: —
ISSN: 10637818, 14684799
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Statistical and Nonlinear Physics
Краткое описание
Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current–voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current–voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70 %−72 %.
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Quantum Electronics
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Bulletin of the Lebedev Physics Institute
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IOP Publishing
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Volkov N. A. et al. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics // Quantum Electronics. 2021. Vol. 51. No. 10. pp. 905-908.
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Volkov N. A., Bagaev T. A., Sabitov D. R., Andreev A., Yarotskaya I. V., Padalitsa A., Ladugin M. A., Marmalyuk A., Bakhvalov K., Veselov D. A., Lyutetskii A. V., Slipchenko S. O., PIKHTIN N. A., Rudova N. A., Strelets V. A. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics // Quantum Electronics. 2021. Vol. 51. No. 10. pp. 905-908.
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TY - JOUR
DO - 10.1070/QEL17628
UR - https://doi.org/10.1070/QEL17628
TI - InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics
T2 - Quantum Electronics
AU - Volkov, N A
AU - Bagaev, T A
AU - Sabitov, D R
AU - Andreev, A.Yu.
AU - Yarotskaya, I V
AU - Padalitsa, A.A.
AU - Ladugin, M A
AU - Marmalyuk, A.A.
AU - Bakhvalov, K.V.
AU - Veselov, D A
AU - Lyutetskii, A V
AU - Slipchenko, S O
AU - PIKHTIN, N. A.
AU - Rudova, N A
AU - Strelets, V A
PY - 2021
DA - 2021/10/01
PB - IOP Publishing
SP - 905-908
IS - 10
VL - 51
SN - 1063-7818
SN - 1468-4799
ER -
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@article{2021_Volkov,
author = {N A Volkov and T A Bagaev and D R Sabitov and A.Yu. Andreev and I V Yarotskaya and A.A. Padalitsa and M A Ladugin and A.A. Marmalyuk and K.V. Bakhvalov and D A Veselov and A V Lyutetskii and S O Slipchenko and N. A. PIKHTIN and N A Rudova and V A Strelets},
title = {InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics},
journal = {Quantum Electronics},
year = {2021},
volume = {51},
publisher = {IOP Publishing},
month = {oct},
url = {https://doi.org/10.1070/QEL17628},
number = {10},
pages = {905--908},
doi = {10.1070/QEL17628}
}
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Volkov, N. A., et al. “InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900-920 nm) with broadened asymmetric waveguides and improved current-voltage characteristics.” Quantum Electronics, vol. 51, no. 10, Oct. 2021, pp. 905-908. https://doi.org/10.1070/QEL17628.