High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
Тип публикации: Journal Article
Дата публикации: 2022-02-01
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SJR: 0.233
CiteScore: 3
Impact factor: 0.9
ISSN: 10637818, 14684799
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Statistical and Nonlinear Physics
Краткое описание
The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7 %. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.
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Romanovich D. N. et al. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures // Quantum Electronics. 2022. Vol. 52. No. 2. pp. 174-178.
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Slipchenko S. O., Romanovich D. N., Veselov D. A., Bagaev T. A., Ladugin M. A., Marmalyuk A., Gavrina P. S., PIKHTIN N. A. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures // Quantum Electronics. 2022. Vol. 52. No. 2. pp. 174-178.
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TY - JOUR
DO - 10.1070/QEL17986
UR - https://doi.org/10.1070/QEL17986
TI - High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
T2 - Quantum Electronics
AU - Slipchenko, S O
AU - Romanovich, D N
AU - Veselov, D A
AU - Bagaev, T A
AU - Ladugin, M A
AU - Marmalyuk, A.A.
AU - Gavrina, P S
AU - PIKHTIN, N. A.
PY - 2022
DA - 2022/02/01
PB - IOP Publishing
SP - 174-178
IS - 2
VL - 52
SN - 1063-7818
SN - 1468-4799
ER -
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@article{2022_Romanovich,
author = {S O Slipchenko and D N Romanovich and D A Veselov and T A Bagaev and M A Ladugin and A.A. Marmalyuk and P S Gavrina and N. A. PIKHTIN},
title = {High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures},
journal = {Quantum Electronics},
year = {2022},
volume = {52},
publisher = {IOP Publishing},
month = {feb},
url = {https://doi.org/10.1070/QEL17986},
number = {2},
pages = {174--178},
doi = {10.1070/QEL17986}
}
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Romanovich, D. N., et al. “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures.” Quantum Electronics, vol. 52, no. 2, Feb. 2022, pp. 174-178. https://doi.org/10.1070/QEL17986.
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