Taylor & Francis
Cogent Physics
,  volume 4 ,  issue 1 ,  pages 1299559

Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure

Md Hafijur Rahman 1
, 
Md. Hafijur Rahman 1
, 
Abu Bakar Md. Ismail 2
, 
Abu Bakar Md. Ismail 2
1
 
Department of Physics, Pabna University of Science and Technology, Pabna 6600, Bangladesh | 
2
 
Publication type: Journal Article
Publication date: 2017-01-01
Taylor & Francis
SJR: —
CiteScore: —
Impact factor: —
ISSN: 23311940
General Environmental Science
General Earth and Planetary Sciences
Abstract
AbstractEffect of LaCl3 concentration on the electrical conduction mechanism of LaF3/porous silicon (PS) structure has been investigated in this work. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique, LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the porous silicon leading to a successful passivation of PS. The compositions of the deposited LaF3 were confirmed by Energy Dispersive of X-ray (EDX) analysis. The electrical conduction study has been done by impedance analyzer (HP4294A). From this study it can be concluded that the conductance increases with LaCl3 concentration but decreases for higher concentration.
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Rahman M. H. et al. Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure // Cogent Physics. 2017. Vol. 4. No. 1. p. 1299559.
GOST all authors (up to 50) Copy
Rahman M. H., Rahman M. H., Ismail A. B. M., Md. Ismail A. B. Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure // Cogent Physics. 2017. Vol. 4. No. 1. p. 1299559.
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RIS Copy
TY - JOUR
DO - 10.1080/23311940.2017.1299559
UR - https://doi.org/10.1080/23311940.2017.1299559
TI - Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure
T2 - Cogent Physics
AU - Rahman, Md Hafijur
AU - Rahman, Md. Hafijur
AU - Ismail, Abu Bakar Md.
AU - Md. Ismail, Abu Bakar
PY - 2017
DA - 2017/01/01
PB - Taylor & Francis
SP - 1299559
IS - 1
VL - 4
SN - 2331-1940
ER -
BibTex |
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@article{2017_Rahman,
author = {Md Hafijur Rahman and Md. Hafijur Rahman and Abu Bakar Md. Ismail and Abu Bakar Md. Ismail},
title = {Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure},
journal = {Cogent Physics},
year = {2017},
volume = {4},
publisher = {Taylor & Francis},
month = {jan},
url = {https://doi.org/10.1080/23311940.2017.1299559},
number = {1},
pages = {1299559},
doi = {10.1080/23311940.2017.1299559}
}
MLA
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Rahman, Md Hafijur, et al. “Investigation on the influence of LaCl3 concentration on the electrical conduction mechanism of chemical-bath deposited LaF3/porous-silicon structure.” Cogent Physics, vol. 4, no. 1, Jan. 2017, p. 1299559. https://doi.org/10.1080/23311940.2017.1299559.