Chinese Physics Letters

, volume 40 , issue 4 , pages 47302

Gatemon qubit based on a thin InAs-Al hybrid nanowire

Jierong Huo ¹

Zezhou Xia ¹

Zonglin Li ¹

ZHONGGUI SHAN ¹

Yuqing Wang ²

董攀 Dong Pan ³

Qichun Liu ²

Yulong Liu ²

Zhichuan Wang ⁴

Yichun Gao ¹

Jianlong Zhao ³

Tiefu Li ⁵

Jianghua Ying ⁶

Runan Shang ²

Hao Zhang ¹

Hide authors affiliations Show authors affiliations: 6 affiliations

State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China |

Beijing Academy of Quantum Information Sciences, Beijing, 100193, China |

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China |

⁴

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China |

⁵

School of Integrated Circuits and Frontier Science Center for Quantum Information, Tsinghua University, Beijing, 100084, CHINA |

⁶

Yangtze Delta Region Industrial Innovation Center of Quantum and Information, Suzhou, 215133, CHINA |

Publication type: Journal Article

Publication date: 2023-03-01

IOP Publishing

Chinese Physics Letters

scimago Q1

wos Q1

SJR: 1.199

CiteScore: 7.2

Impact factor: 4.2

ISSN: 0256307X, 17413540

DOI: 10.1088/0256-307x/40/4/047302

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General Physics and Astronomy

Abstract

We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T ₁ ∼ 0.56 μs and the dephasing time T 2 * ∼ 0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.

Found

1 citation

Stolyarov Vasily

🥼 🤝

DSc in Physics and Mathematics, professor

143 publications, 2 352 citations, 10 reviews

h-index: 26

École supérieure de physique et de chimie industrielles de la Ville de Paris

Dukhov Research Institute of Automatics

Moscow Institute of Physics and Technology

Research interests

2D Materials

Josephson structures

Low-temperature technologies

Magnetism

Nanotechnology

Scanning tunneling microscopy

Superconductivity

Topological insulators

1 citation

Yakovlev Dmitry

🥼 🤝

PhD in Engineering

18 publications, 64 citations, 6 reviews

h-index: 5

Moscow Institute of Physics and Technology

Russian Quantum Center

École supérieure de physique et de chimie industrielles de la Ville de Paris

Research interests

Topological insulator

1 citation

Nazhestkin Ivan

PhD in Physics and Mathematics

14 publications, 36 citations

h-index: 3

Russian Quantum Center

Moscow Institute of Physics and Technology

Research interests

Artificial neural networks

Development and modeling of superconducting quantum circuits

Josephson structures

Quantum computing

Superconducting electronics

Superconductivity

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GOST |

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GOST Copy

Huo J. et al. Gatemon qubit based on a thin InAs-Al hybrid nanowire // Chinese Physics Letters. 2023. Vol. 40. No. 4. p. 47302.

GOST all authors (up to 50) Copy

Huo J., Xia Z., Li Z., SHAN Z., Wang Y., Dong Pan 董., Liu Q., Liu Y., Wang Z., Gao Y., Zhao J., Li T., Ying J., Shang R., Zhang H. Gatemon qubit based on a thin InAs-Al hybrid nanowire // Chinese Physics Letters. 2023. Vol. 40. No. 4. p. 47302.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1088/0256-307x/40/4/047302

UR - https://doi.org/10.1088/0256-307x/40/4/047302

TI - Gatemon qubit based on a thin InAs-Al hybrid nanowire

T2 - Chinese Physics Letters

AU - Huo, Jierong

AU - Xia, Zezhou

AU - Li, Zonglin

AU - SHAN, ZHONGGUI

AU - Wang, Yuqing

AU - Dong Pan, 董攀

AU - Liu, Qichun

AU - Liu, Yulong

AU - Wang, Zhichuan

AU - Gao, Yichun

AU - Zhao, Jianlong

AU - Li, Tiefu

AU - Ying, Jianghua

AU - Shang, Runan

AU - Zhang, Hao

PY - 2023

DA - 2023/03/01

PB - IOP Publishing

SP - 47302

IS - 4

VL - 40

SN - 0256-307X

SN - 1741-3540

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2023_Huo,

author = {Jierong Huo and Zezhou Xia and Zonglin Li and ZHONGGUI SHAN and Yuqing Wang and 董攀 Dong Pan and Qichun Liu and Yulong Liu and Zhichuan Wang and Yichun Gao and Jianlong Zhao and Tiefu Li and Jianghua Ying and Runan Shang and Hao Zhang},

title = {Gatemon qubit based on a thin InAs-Al hybrid nanowire},

journal = {Chinese Physics Letters},

year = {2023},

volume = {40},

publisher = {IOP Publishing},

month = {mar},

url = {https://doi.org/10.1088/0256-307x/40/4/047302},

number = {4},

pages = {47302},

doi = {10.1088/0256-307x/40/4/047302}

}

MLA

Cite this

MLA Copy

Huo, Jierong, et al. “Gatemon qubit based on a thin InAs-Al hybrid nanowire.” Chinese Physics Letters, vol. 40, no. 4, Mar. 2023, p. 47302. https://doi.org/10.1088/0256-307x/40/4/047302.

Publisher

IOP Publishing

Journal

Chinese Physics Letters

scimago Q1

wos Q1

SJR

1.199

CiteScore

7.2

Impact factor

4.2

ISSN

0256307X (Print)

17413540 (Electronic)