Semiconductor Science and Technology, volume 15, issue 7, pages 766-769

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

A. F. TSATSUL'NIKOV ¹

I.L. Krestnikov ¹

W.V. Lundin ¹

A.V. Sakharov ¹

A P Kartashova ¹

A S Usikov ¹

Zh. I. Alferov ¹

N. N. LEDENTSOV ²

A. Strittmatter ²

Axel Hoffmann ²

D. Bimberg ²

I. P. Soshnikov ³

D. LITVINOV ³

Andreas Rosenauer ³

Dagmar Gerthsen ³

A.S. Plaut ⁴

Show full list: 16 authors

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Ioffe Physico-Technical Institute of Russian Academy of Sciences,Politekhnicheskaya 26, 194021, St Petersburg, Russia |

Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany |

Universität Karlsruhe, Kaiserstr.12, 76128 Karlsruhe, Germany |

⁴

Exeter University, Stocker Road, Exeter EX4 4QL, UK |

Publication type: Journal Article

Publication date: 2000-06-23

IOP Publishing

Journal: Semiconductor Science and Technology

scimago Q2

wos Q3

SJR: 0.411

CiteScore: 4.3

Impact factor: 1.9

ISSN: 02681242, 13616641

DOI: 10.1088/0268-1242/15/7/318

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Abstract

Coherent ultrathin GaAsN insertions are formed in a GaN matrix by predeposition of an ultrathin GaAs layer on a GaN surface, followed by annealing in an NH3 atmosphere and overgrowth with GaN. During the overgrowth, most of the As atoms are substituted by N, with a dense array of coherent GaAsN nanodomains with lateral sizes of about 3-4 nm formed in the GaN matrix. We report a green luminescence due to GaAsN insertions, surviving at high observation temperatures and excitation densities.

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Publisher

IOP Publishing

Journal

Semiconductor Science and Technology

scimago Q2

wos Q3

SJR

0.411

CiteScore

4.3

Impact factor

1.9

ISSN

02681242 (Print)

13616641 (Electronic)

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

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