Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
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Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864, Agrate Brianza, MB, Italy
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3
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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Publication type: Journal Article
Publication date: 2012-06-22
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Atomic layer deposition (ALD) has been established as a powerful method for the growth of very thin and conformal films to be used in ultra-scaled conventional and novel microelectronic devices. We report the most recent advancements in the field of ALD of rare-earth-based oxides to be implemented as active dielectrics. The review is balanced between the development of new ALD processes and the assessment and the discussion of fundamental scientific issues related to the structural, chemical and electrical properties of thin films of rare-earth-based oxides. The deposition process of binary lanthanide oxides is critically reviewed focusing on the first (La) and last (Lu) element of the series. Concomitantly, the integration of rare earth elements as dopant atoms in HfO2?and ZrO2?is also systematically reported. A final overview is dedicated to the results obtained by ALD of more innovative lanthanum-based ternary oxides.
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Total citations:
41
Citations from 2024:
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(9.76%)
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Citations in journal:
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GOST
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Wiemer C. et al. Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications // Semiconductor Science and Technology. 2012. Vol. 27. No. 7. p. 74013.
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Wiemer C., Lamagna L., Fanciulli M. Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications // Semiconductor Science and Technology. 2012. Vol. 27. No. 7. p. 74013.
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RIS
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TY - JOUR
DO - 10.1088/0268-1242/27/7/074013
UR - https://doi.org/10.1088/0268-1242/27/7/074013
TI - Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
T2 - Semiconductor Science and Technology
AU - Wiemer, Claudia
AU - Lamagna, Luca
AU - Fanciulli, Marco
PY - 2012
DA - 2012/06/22
PB - IOP Publishing
SP - 74013
IS - 7
VL - 27
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2012_Wiemer,
author = {Claudia Wiemer and Luca Lamagna and Marco Fanciulli},
title = {Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications},
journal = {Semiconductor Science and Technology},
year = {2012},
volume = {27},
publisher = {IOP Publishing},
month = {jun},
url = {https://doi.org/10.1088/0268-1242/27/7/074013},
number = {7},
pages = {74013},
doi = {10.1088/0268-1242/27/7/074013}
}
Cite this
MLA
Copy
Wiemer, Claudia, et al. “Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications.” Semiconductor Science and Technology, vol. 27, no. 7, Jun. 2012, p. 74013. https://doi.org/10.1088/0268-1242/27/7/074013.