Nanotechnology, volume 20, issue 43, pages 434016

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

S Gerhard ¹

V. Baumann ²

Sven Höfling ²

A. FORCHEL ²

Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Technische Physik, Universität Würzburg, Würzburg, Germany. Sven.Gerhard@physik.uni-wuerzburg.de |

Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany |

Publication type: Journal Article

Publication date: 2009-10-02

IOP Publishing

Journal: Nanotechnology

scimago Q2

wos Q2

SJR: 0.631

CiteScore: 7.1

Impact factor: 2.9

ISSN: 09574484, 13616528

DOI: 10.1088/0957-4484/20/43/434016

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General Chemistry

General Materials Science

Electrical and Electronic Engineering

Mechanical Engineering

Bioengineering

Mechanics of Materials

Abstract

We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

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Publisher

IOP Publishing

Journal

Nanotechnology

scimago Q2

wos Q2

SJR

0.631

CiteScore

7.1

Impact factor

2.9

ISSN

09574484 (Print)

13616528 (Electronic)

The structural and optical characterization of high areal density Ga_xIn_1−xP quantum dots on GaP

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