Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold
Publication type: Journal Article
Publication date: 2013-09-02
scimago Q2
wos Q2
SJR: 0.597
CiteScore: 6.2
Impact factor: 2.8
ISSN: 09574484, 13616528
PubMed ID:
23999153
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract
Chemical synapses are important components of the large-scaled neural network in the hippocampus of the mammalian brain, and a change in their weight is thought to be in charge of learning and memory. Thus, the realization of artificial chemical synapses is of crucial importance in achieving artificial neural networks emulating the brain's functionalities to some extent. This kind of research is often referred to as neuromorphic engineering. In this study, we report short-term memory behaviours of electrochemical capacitors (ECs) utilizing TiO2 mixed ionic-electronic conductor and various reactive electrode materials e.g. Ti, Ni, and Cr. By experiments, it turned out that the potentiation behaviours did not represent unlimited growth of synaptic weight. Instead, the behaviours exhibited limited synaptic weight growth that can be understood by means of an empirical equation similar to the Bienenstock-Cooper-Munro rule, employing a sliding threshold. The observed potentiation behaviours were analysed using the empirical equation and the differences between the different ECs were parameterized.
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Citations from 2024:
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GOST
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Lim H. et al. Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold // Nanotechnology. 2013. Vol. 24. No. 38. p. 384005.
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Lim H., Kim I., Kim J., Hwang C. M., Jeong D. S. Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold // Nanotechnology. 2013. Vol. 24. No. 38. p. 384005.
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RIS
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TY - JOUR
DO - 10.1088/0957-4484/24/38/384005
UR - https://doi.org/10.1088/0957-4484/24/38/384005
TI - Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold
T2 - Nanotechnology
AU - Lim, Hyungkwang
AU - Kim, Inho
AU - Kim, Jin-Sang
AU - Hwang, Cheol Mok
AU - Jeong, D. S.
PY - 2013
DA - 2013/09/02
PB - IOP Publishing
SP - 384005
IS - 38
VL - 24
PMID - 23999153
SN - 0957-4484
SN - 1361-6528
ER -
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BibTex (up to 50 authors)
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@article{2013_Lim,
author = {Hyungkwang Lim and Inho Kim and Jin-Sang Kim and Cheol Mok Hwang and D. S. Jeong},
title = {Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold},
journal = {Nanotechnology},
year = {2013},
volume = {24},
publisher = {IOP Publishing},
month = {sep},
url = {https://doi.org/10.1088/0957-4484/24/38/384005},
number = {38},
pages = {384005},
doi = {10.1088/0957-4484/24/38/384005}
}
Cite this
MLA
Copy
Lim, Hyungkwang, et al. “Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold.” Nanotechnology, vol. 24, no. 38, Sep. 2013, p. 384005. https://doi.org/10.1088/0957-4484/24/38/384005.