The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
Huiwen Deng
1
,
Lydia Jarvis
2
,
Zhibo Li
2, 3
,
Zizhuo Liu
1
,
Mingchu Tang
1
,
Keshuang Li
1
,
Junjie Yang
1
,
Maglio Benjamin
2
,
Samuel Shutts
2
,
Jiawang Yu
4
,
Lingfang Wang
4
,
Siming Chen
1
,
Chaoyuan Jin
4, 5
,
Alwyn Seeds
1
,
Huiyun Liu
1
,
Peter M. Smowton
2
5
Zhejiang Laboratory, Hangzhou 311121, People’s Republic of China
|
Тип публикации: Journal Article
Дата публикации: 2022-03-01
scimago Q1
wos Q2
БС1
SJR: 0.650
CiteScore: 6.4
Impact factor: 3.2
ISSN: 00223727, 13616463
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Краткое описание
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.
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Deng H. et al. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers // Journal Physics D: Applied Physics. 2022. Vol. 55. No. 21. p. 215105.
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Deng H., Jarvis L., Li Z., Liu Z., Tang M., Li K., Yang J., Benjamin M., Shutts S., Yu J., Wang L., Chen S., Jin C., Seeds A., Liu H., Smowton P. M. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers // Journal Physics D: Applied Physics. 2022. Vol. 55. No. 21. p. 215105.
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TY - JOUR
DO - 10.1088/1361-6463/ac55c4
UR - https://doi.org/10.1088/1361-6463/ac55c4
TI - The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
T2 - Journal Physics D: Applied Physics
AU - Deng, Huiwen
AU - Jarvis, Lydia
AU - Li, Zhibo
AU - Liu, Zizhuo
AU - Tang, Mingchu
AU - Li, Keshuang
AU - Yang, Junjie
AU - Benjamin, Maglio
AU - Shutts, Samuel
AU - Yu, Jiawang
AU - Wang, Lingfang
AU - Chen, Siming
AU - Jin, Chaoyuan
AU - Seeds, Alwyn
AU - Liu, Huiyun
AU - Smowton, Peter M.
PY - 2022
DA - 2022/03/01
PB - IOP Publishing
SP - 215105
IS - 21
VL - 55
SN - 0022-3727
SN - 1361-6463
ER -
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@article{2022_Deng,
author = {Huiwen Deng and Lydia Jarvis and Zhibo Li and Zizhuo Liu and Mingchu Tang and Keshuang Li and Junjie Yang and Maglio Benjamin and Samuel Shutts and Jiawang Yu and Lingfang Wang and Siming Chen and Chaoyuan Jin and Alwyn Seeds and Huiyun Liu and Peter M. Smowton},
title = {The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers},
journal = {Journal Physics D: Applied Physics},
year = {2022},
volume = {55},
publisher = {IOP Publishing},
month = {mar},
url = {https://doi.org/10.1088/1361-6463/ac55c4},
number = {21},
pages = {215105},
doi = {10.1088/1361-6463/ac55c4}
}
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MLA
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Deng, Huiwen, et al. “The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers.” Journal Physics D: Applied Physics, vol. 55, no. 21, Mar. 2022, p. 215105. https://doi.org/10.1088/1361-6463/ac55c4.