volume 33 issue 6 pages 65601

Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

Publication typeJournal Article
Publication date2021-11-19
scimago Q2
wos Q2
SJR0.597
CiteScore6.2
Impact factor2.8
ISSN09574484, 13616528
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract

InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission electron microscopy investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

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GOST |
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GOST Copy
Sala E. M. et al. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer // Nanotechnology. 2021. Vol. 33. No. 6. p. 65601.
GOST all authors (up to 50) Copy
Sala E. M., Godsland M., Na Y. I., Trapalis A., Heffernan J. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer // Nanotechnology. 2021. Vol. 33. No. 6. p. 65601.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1088/1361-6528/ac3617
UR - https://doi.org/10.1088/1361-6528/ac3617
TI - Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer
T2 - Nanotechnology
AU - Sala, Elisa M.
AU - Godsland, Max
AU - Na, Young In
AU - Trapalis, A
AU - Heffernan, J.
PY - 2021
DA - 2021/11/19
PB - IOP Publishing
SP - 65601
IS - 6
VL - 33
PMID - 34731846
SN - 0957-4484
SN - 1361-6528
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2021_Sala,
author = {Elisa M. Sala and Max Godsland and Young In Na and A Trapalis and J. Heffernan},
title = {Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer},
journal = {Nanotechnology},
year = {2021},
volume = {33},
publisher = {IOP Publishing},
month = {nov},
url = {https://doi.org/10.1088/1361-6528/ac3617},
number = {6},
pages = {65601},
doi = {10.1088/1361-6528/ac3617}
}
MLA
Cite this
MLA Copy
Sala, Elisa M., et al. “Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.” Nanotechnology, vol. 33, no. 6, Nov. 2021, p. 65601. https://doi.org/10.1088/1361-6528/ac3617.