Semiconductor Science and Technology

, volume 37 , issue 9 , pages 95004

Investigation on high quality ultra-wide band gap β-Ga₂O₃/AlN heterostructure grown by metal organic chemical vapor deposition

Yifan Li ¹

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Xidian University School of Microelectronics, Shanxi Xian XiDian University, Shanxi Xian, 710071, CHINA |

Publication type: Journal Article

Publication date: 2022-07-26

IOP Publishing

Semiconductor Science and Technology

scimago Q2

wos Q3

SJR: 0.405

CiteScore: 4.2

Impact factor: 2.1

ISSN: 02681242, 13616641

DOI: 10.1088/1361-6641/ac7fb4

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Abstract

β-Ga₂O₃ films were grown on AlN templates by metal organic chemical vapor deposition (MOCVD), and the properties of the β-Ga₂O₃/AlN heterostructures were investigated in detail. The β-Ga₂O₃/AlN heterostructure with abrupt interface was observed by the high resolution transmission electron microscope with high angle annular dark field. The refactor of the atoms at the interface is discussed. Moreover, the band structure of the MOCVD β-Ga₂O₃/AlN heterostructures was investigated by x-ray photoelectron spectroscopy. The conduction band and valence band offsets of β-Ga₂O₃/AlN heterostructure were calculated to be −1.44 eV ± 0.05 eV and −0.14 eV ± 0.05 eV, respectively.

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Li Y. et al. Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition // Semiconductor Science and Technology. 2022. Vol. 37. No. 9. p. 95004.

GOST all authors (up to 50) Copy

Li Y. Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition // Semiconductor Science and Technology. 2022. Vol. 37. No. 9. p. 95004.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1088/1361-6641/ac7fb4

UR - https://doi.org/10.1088/1361-6641/ac7fb4

TI - Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition

T2 - Semiconductor Science and Technology

AU - Li, Yifan

PY - 2022

DA - 2022/07/26

PB - IOP Publishing

SP - 95004

IS - 9

VL - 37

SN - 0268-1242

SN - 1361-6641

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2022_Li,

author = {Yifan Li},

title = {Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition},

journal = {Semiconductor Science and Technology},

year = {2022},

volume = {37},

publisher = {IOP Publishing},

month = {jul},

url = {https://doi.org/10.1088/1361-6641/ac7fb4},

number = {9},

pages = {95004},

doi = {10.1088/1361-6641/ac7fb4}

}

MLA

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MLA Copy

Li, Yifan, et al. “Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition.” Semiconductor Science and Technology, vol. 37, no. 9, Jul. 2022, p. 95004. https://doi.org/10.1088/1361-6641/ac7fb4.

Publisher

IOP Publishing

Journal

Semiconductor Science and Technology

scimago Q2

wos Q3

SJR

0.405

CiteScore

4.2

Impact factor

2.1

ISSN

02681242 (Print)

13616641 (Electronic)