Design and Performance Analysis of Double Gate Vertically Stacked MoS2 Nanosheet Field Effect Transistor

In this work we report a vertically stacked nanosheet Field Effect Transistor (NSFET) in double gate configuration using transition metal dichalcogenide (TMD) based molybdenum disulphide (MoS₂) as the conducting channel. The performance of the NSFET is analysed for number of channels, different channel thickness, different source/drain contacts. The performance of the device at different temperatures (T) also analysed. The proposed NSFET with three vertically stacked channels, exhibits a ON current (I_ON) of 30.6 μA μm⁻¹, Subthreshold swing (SS) of 69 mV/dec and ON to OFF current ratio of more than 10⁸ at V_ds = 1V. Further the I_ON can be improved with multi-layer channel thickness. The performance of the vertically stacked MoS₂ NSFET in junction less (JL) and inversion mode (IM) is compared, it is concluded from the simulations that JL vertically stacked MoS₂ NSFET more immune to short channel effects such as threshold voltage (V_th) roll-off and drain induced barrier lowering (DIBL).