The dependences of ESR line widths and spin - spin relaxation times of single nitrogen defects on the concentration of nitrogen defects in diamond

Line widths and spin - spin relaxation times of P1 centres in synthetic Ib and natural Ia diamonds with concentrations of P1 and P2 centres covering the range 0.03 - 400 atomic parts per million have been measured. At concentrations higher than about ten atomic parts per million the line width is linearly dependent on the concentration. At lower concentrations the electron - dipolar contribution to the line width dominates and the width of the line remains constant. Since the pulse sequence employed for measurements eliminates the effects of inhomogeneous line broadening, of the line remains linearly dependent on the total paramagnetic impurity concentration, even at very low paramagnetic impurity concentrations.