Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures
A A Podoskin
1
,
Olga Nikolaevna Soboleva
1
,
M. S. Zakharov
1
,
D A Veselov
1
,
V V Zolotarev
1
,
N. A. PIKHTIN
1
,
I. S. TARASOV
1
,
T A Bagaev
2
,
M A Ladugin
2
,
A.A. Marmalyuk
2
,
V A Simakov
2
,
2
Stel’makh Research and Development Institute ‘Polyus’, 117342 Moscow, Russia
|
Publication type: Journal Article
Publication date: 2015-11-06
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p–n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.
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Podoskin A. A. et al. Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures // Semiconductor Science and Technology. 2015. Vol. 30. No. 12. p. 125011.
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Podoskin A. A., Soboleva O. N., Zakharov M. S., Veselov D. A., Zolotarev V. V., PIKHTIN N. A., TARASOV I. S., Bagaev T. A., Ladugin M. A., Marmalyuk A., Simakov V. A., Slipchenko S. Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures // Semiconductor Science and Technology. 2015. Vol. 30. No. 12. p. 125011.
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TY - JOUR
DO - 10.1088/0268-1242/30/12/125011
UR - https://doi.org/10.1088/0268-1242/30/12/125011
TI - Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures
T2 - Semiconductor Science and Technology
AU - Podoskin, A A
AU - Soboleva, Olga Nikolaevna
AU - Zakharov, M. S.
AU - Veselov, D A
AU - Zolotarev, V V
AU - PIKHTIN, N. A.
AU - TARASOV, I. S.
AU - Bagaev, T A
AU - Ladugin, M A
AU - Marmalyuk, A.A.
AU - Simakov, V A
AU - Slipchenko, S.O.
PY - 2015
DA - 2015/11/06
PB - IOP Publishing
SP - 125011
IS - 12
VL - 30
SN - 0268-1242
SN - 1361-6641
ER -
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BibTex (up to 50 authors)
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@article{2015_Podoskin,
author = {A A Podoskin and Olga Nikolaevna Soboleva and M. S. Zakharov and D A Veselov and V V Zolotarev and N. A. PIKHTIN and I. S. TARASOV and T A Bagaev and M A Ladugin and A.A. Marmalyuk and V A Simakov and S.O. Slipchenko},
title = {Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures},
journal = {Semiconductor Science and Technology},
year = {2015},
volume = {30},
publisher = {IOP Publishing},
month = {nov},
url = {https://doi.org/10.1088/0268-1242/30/12/125011},
number = {12},
pages = {125011},
doi = {10.1088/0268-1242/30/12/125011}
}
Cite this
MLA
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Podoskin, A. A., et al. “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures.” Semiconductor Science and Technology, vol. 30, no. 12, Nov. 2015, p. 125011. https://doi.org/10.1088/0268-1242/30/12/125011.