Nanotechnology, volume 27, issue 42, pages 425204
High performance PbSe colloidal quantum dot vertical field effect phototransistors
Hai-Ting Zhang
1
,
Yating Zhang
1
,
Xiaoxian Song
1
,
Yuan Yu
1
,
Mingxuan Cao
1
,
Yongli Che
1
,
Jianlong Wang
1
,
Junbo Yang
2
,
Haitao Dai
3
,
Guizhong Zhang
1
,
Publication type: Journal Article
Publication date: 2016-09-13
Journal:
Nanotechnology
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor: 3.5
ISSN: 09574484, 13616528
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract
Here, vertical field effect phototransistors (VFEPTs) based on lead selenide colloidal quantum dots (PbSe CQDs) for infrared photo detection were investigated, using Au/Ag nanowires as the source transparent electrode. VFEPTs have the advantage of easy fabrication of ultrashort channel length devices, as the channel length is simply determined here by the PbSe CQDs active layer's thickness (260 nm). In ultrashort channels, photo-excited carriers quickly (in nanoseconds) transfer to the drain. As soon as a hole (electron) reaches the drain, a hole (electron) is replenished from the source. Accordingly, multiple holes circulate in the ultrashort channel following a single electron-hole photo generation. As a result, the device exhibits superior photoconductive properties over the lateral structure. PbSe CQD VFEPTs show ambipolar operation under low voltage down to one volt at room temperature. Moreover, high photo responsivity and high specific detectivity of 2 × 10(4) A W(-1) and 7 × 10(12) Jones are also achieved in the devices under 808 nm laser illumination. The transparent electrode-based near infrared VFEPTs prepared through this self-assembly solution process show promise for applications in electronics and photoelectronics.
Top-30
Citations by journals
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1
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Applied Sciences (Switzerland)
1 publication, 4.76%
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ACS Nano
1 publication, 4.76%
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Journal of Materials Science: Materials in Electronics
1 publication, 4.76%
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Journal of Materials Science
1 publication, 4.76%
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Sensors and Actuators, A: Physical
1 publication, 4.76%
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Nanotechnology
1 publication, 4.76%
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Optical Materials
1 publication, 4.76%
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Advanced Materials Technologies
1 publication, 4.76%
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Journal of the American Ceramic Society
1 publication, 4.76%
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Small
1 publication, 4.76%
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ACS applied materials & interfaces
1 publication, 4.76%
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ACS Applied Electronic Materials
1 publication, 4.76%
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Journal of Materials Chemistry C
1 publication, 4.76%
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Materials Advances
1 publication, 4.76%
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Nanophotonics
1 publication, 4.76%
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Materials Chemistry and Physics
1 publication, 4.76%
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Infrared Physics and Technology
1 publication, 4.76%
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Russian Chemical Reviews
1 publication, 4.76%
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Coatings
1 publication, 4.76%
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1
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Citations by publishers
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1
2
3
4
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Elsevier
4 publications, 19.05%
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American Chemical Society (ACS)
3 publications, 14.29%
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Wiley
3 publications, 14.29%
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Multidisciplinary Digital Publishing Institute (MDPI)
2 publications, 9.52%
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Springer Nature
2 publications, 9.52%
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Royal Society of Chemistry (RSC)
2 publications, 9.52%
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IOP Publishing
1 publication, 4.76%
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Walter de Gruyter
1 publication, 4.76%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 4.76%
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1
2
3
4
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Zhang H. et al. High performance PbSe colloidal quantum dot vertical field effect phototransistors // Nanotechnology. 2016. Vol. 27. No. 42. p. 425204.
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Zhang H., Zhang Y., Song X., Yu Y., Cao M., Che Y., Wang J., Yang J., Dai H., Zhang G., Yao J. High performance PbSe colloidal quantum dot vertical field effect phototransistors // Nanotechnology. 2016. Vol. 27. No. 42. p. 425204.
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TY - JOUR
DO - 10.1088/0957-4484/27/42/425204
UR - https://doi.org/10.1088/0957-4484/27/42/425204
TI - High performance PbSe colloidal quantum dot vertical field effect phototransistors
T2 - Nanotechnology
AU - Zhang, Hai-Ting
AU - Zhang, Yating
AU - Song, Xiaoxian
AU - Yu, Yuan
AU - Cao, Mingxuan
AU - Che, Yongli
AU - Wang, Jianlong
AU - Yang, Junbo
AU - Dai, Haitao
AU - Zhang, Guizhong
AU - Yao, Jiyong
PY - 2016
DA - 2016/09/13 00:00:00
PB - IOP Publishing
SP - 425204
IS - 42
VL - 27
SN - 0957-4484
SN - 1361-6528
ER -
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@article{2016_Zhang,
author = {Hai-Ting Zhang and Yating Zhang and Xiaoxian Song and Yuan Yu and Mingxuan Cao and Yongli Che and Jianlong Wang and Junbo Yang and Haitao Dai and Guizhong Zhang and Jiyong Yao},
title = {High performance PbSe colloidal quantum dot vertical field effect phototransistors},
journal = {Nanotechnology},
year = {2016},
volume = {27},
publisher = {IOP Publishing},
month = {sep},
url = {https://doi.org/10.1088/0957-4484/27/42/425204},
number = {42},
pages = {425204},
doi = {10.1088/0957-4484/27/42/425204}
}
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MLA
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Zhang, Hai-Ting, et al. “High performance PbSe colloidal quantum dot vertical field effect phototransistors.” Nanotechnology, vol. 27, no. 42, Sep. 2016, p. 425204. https://doi.org/10.1088/0957-4484/27/42/425204.
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