Nanotechnology, volume 27, issue 6, pages 65201

Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector

Chunjie Fu ¹

Haowei Wang ^{2, 3, 4}

Taojian Song ¹

Li Zhang ^{2, 3, 4}

Wei-Le Li ¹

Bo He ¹

Muhammad Sulaman ¹

Sheng-Yi Yang ^{5, 6}

Rui-Bin Liu ¹

Hide authors affiliations Show authors affiliations: 6 affiliations

Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China. |

Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems |

School of Materials Science and Engineering, Beijing Institute of Technology |

⁴

Beijing 100081 People's Republic of China |

⁵

Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China |

⁶

State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, People's Republic of China |

Publication type: Journal Article

Publication date: 2015-12-18

IOP Publishing

Journal: Nanotechnology

Quartile SCImago

Quartile WOS

Impact factor: 3.5

ISSN: 09574484, 13616528

DOI: 10.1088/0957-4484/27/6/065201

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General Chemistry

General Materials Science

Electrical and Electronic Engineering

Mechanical Engineering

Bioengineering

Mechanics of Materials

Abstract

Infrared (IR) emission lead selenide (PbSe) quantum dots (QDs) have gained considerable attention in the last decade due to their potential applications in optoelectronic devices. However, the comprehensive applications of PbSe QDs have not been realized yet due to their high susceptibility to oxidation in air. In this paper, we demonstrate the stability enhancement of PbSe colloidal QDs via a post-synthetic ammonium chloride treatment and its applications in a solution-processed high-performance IR photodetector with a field-effect transistor (FET) configuration by reversely fabricating the PbSe active layer and polymethylmethacrylate (PMMA) dielectric layer. The responsivity and the specific detectivity of the FET-based photodetector Au(source, drain)/PbSe(52 nm)/PMMA(930 nm)/Au(gate) reached 64.17 mA W(-1) and 5.08 × 10(10) Jones, respectively, under 980 nm laser illumination with an intensity of 0.1 mW cm(-2). Therefore, it provides a promising way to make a high-sensitivity near-IR/mid-IR photodetector.

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Citations by journals

	1 2 3
RSC Advances	RSC Advances, 3, 12.5% RSC Advances 3 publications, 12.5%
Infrared Physics and Technology	Infrared Physics and Technology, 1, 4.17% Infrared Physics and Technology 1 publication, 4.17%
Nano	Nano, 1, 4.17% Nano 1 publication, 4.17%
Nanomaterials	Nanomaterials, 1, 4.17% Nanomaterials 1 publication, 4.17%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 4.17% Journal of Materials Science: Materials in Electronics 1 publication, 4.17%
Physica B: Condensed Matter	Physica B: Condensed Matter, 1, 4.17% Physica B: Condensed Matter 1 publication, 4.17%
Nanotechnology	Nanotechnology, 1, 4.17% Nanotechnology 1 publication, 4.17%
Journal of Alloys and Compounds	Journal of Alloys and Compounds, 1, 4.17% Journal of Alloys and Compounds 1 publication, 4.17%
Journal of Materials Science and Technology	Journal of Materials Science and Technology, 1, 4.17% Journal of Materials Science and Technology 1 publication, 4.17%
Physica Status Solidi (B): Basic Research	Physica Status Solidi (B): Basic Research, 1, 4.17% Physica Status Solidi (B): Basic Research 1 publication, 4.17%
Particle and Particle Systems Characterization	Particle and Particle Systems Characterization, 1, 4.17% Particle and Particle Systems Characterization 1 publication, 4.17%
Advanced Functional Materials	Advanced Functional Materials, 1, 4.17% Advanced Functional Materials 1 publication, 4.17%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 1, 4.17% Journal of Materials Chemistry C 1 publication, 4.17%
ACS applied materials & interfaces	ACS applied materials & interfaces, 1, 4.17% ACS applied materials & interfaces 1 publication, 4.17%
Small	Small, 1, 4.17% Small 1 publication, 4.17%
Journal of Nanomaterials	Journal of Nanomaterials, 1, 4.17% Journal of Nanomaterials 1 publication, 4.17%
Materials Chemistry and Physics	Materials Chemistry and Physics, 1, 4.17% Materials Chemistry and Physics 1 publication, 4.17%
Materials	Materials, 1, 4.17% Materials 1 publication, 4.17%
Computational Materials Science	Computational Materials Science, 1, 4.17% Computational Materials Science 1 publication, 4.17%
Thin Solid Films	Thin Solid Films, 1, 4.17% Thin Solid Films 1 publication, 4.17%
Russian Chemical Reviews	Russian Chemical Reviews, 1, 4.17% Russian Chemical Reviews 1 publication, 4.17%
Chemical Science	Chemical Science, 1, 4.17% Chemical Science 1 publication, 4.17%
	1 2 3

Citations by publishers

	1 2 3 4 5 6
Elsevier	Elsevier, 6, 25% Elsevier 6 publications, 25%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 5, 20.83% Royal Society of Chemistry (RSC) 5 publications, 20.83%
Wiley	Wiley, 4, 16.67% Wiley 4 publications, 16.67%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 2, 8.33% Multidisciplinary Digital Publishing Institute (MDPI) 2 publications, 8.33%
Springer Nature	Springer Nature, 2, 8.33% Springer Nature 2 publications, 8.33%
World Scientific	World Scientific, 1, 4.17% World Scientific 1 publication, 4.17%
IOP Publishing	IOP Publishing, 1, 4.17% IOP Publishing 1 publication, 4.17%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 4.17% American Chemical Society (ACS) 1 publication, 4.17%
Hindawi Limited	Hindawi Limited, 1, 4.17% Hindawi Limited 1 publication, 4.17%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 4.17% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 4.17%
	1 2 3 4 5 6

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Fu C. et al. Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector // Nanotechnology. 2015. Vol. 27. No. 6. p. 65201.

GOST all authors (up to 50) Copy

Fu C., Wang H., Song T., Zhang L., Li W., He B., Sulaman M., Yang S., Liu R. Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector // Nanotechnology. 2015. Vol. 27. No. 6. p. 65201.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1088/0957-4484/27/6/065201

UR - https://doi.org/10.1088/0957-4484/27/6/065201

TI - Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector

T2 - Nanotechnology

AU - Fu, Chunjie

AU - Wang, Haowei

AU - Song, Taojian

AU - Zhang, Li

AU - Li, Wei-Le

AU - He, Bo

AU - Sulaman, Muhammad

AU - Yang, Sheng-Yi

AU - Liu, Rui-Bin

PY - 2015

DA - 2015/12/18 00:00:00

PB - IOP Publishing

SP - 65201

IS - 6

VL - 27

SN - 0957-4484

SN - 1361-6528

ER -

BibTex |

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BibTex Copy

@article{2015_Fu,

author = {Chunjie Fu and Haowei Wang and Taojian Song and Li Zhang and Wei-Le Li and Bo He and Muhammad Sulaman and Sheng-Yi Yang and Rui-Bin Liu},

title = {Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector},

journal = {Nanotechnology},

year = {2015},

volume = {27},

publisher = {IOP Publishing},

month = {dec},

url = {https://doi.org/10.1088/0957-4484/27/6/065201},

number = {6},

pages = {65201},

doi = {10.1088/0957-4484/27/6/065201}

}

MLA

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MLA Copy

Fu, Chunjie, et al. “Stability enhancement of PbSe quantum dots via post-synthetic ammonium chloride treatment for a high-performance infrared photodetector.” Nanotechnology, vol. 27, no. 6, Dec. 2015, p. 65201. https://doi.org/10.1088/0957-4484/27/6/065201.

Found error?

Publisher

IOP Publishing

Journal

Nanotechnology

Quartile SCImago

Quartile WOS

Impact factor

3.5

ISSN

09574484 (Print)
13616528 (Electronic)