Nanotechnology, volume 31, issue 24, pages 244003
Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface.
Mozharov A. M.
1
,
Fedorov Yury V
1
,
Shtrom I V
1, 2
,
Uvarov Alexander
1
,
Kudryashov D. A.
1
,
Baranov A. I.
1
,
Mikhailovskii V
2
,
Neplokh Vladimir
1
,
Cirlin G.E.
1, 4
,
Mukhin Ivan S.
1, 5
3
Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris Sud, Univ. Paris-Saclay, 8 Avenue de la Vauve, 91120 Palaiseau, France.
|
4
Publication type: Journal Article
Publication date: 2020-03-27
Journal:
Nanotechnology
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor: 3.5
ISSN: 09574484, 13616528
General Chemistry
General Materials Science
Electrical and Electronic Engineering
Mechanical Engineering
Bioengineering
Mechanics of Materials
Abstract
The influence of hydrogen plasma treatment on electrical and optical properties of the vertical GaN nanowires (NWs)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence (PL) investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. Electron beam induced current (EBIC) measurements demonstrated the absence of the potential barriers between active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration providing improved electrical properties is found to be 10 minutes within taken passivation regimes. It is demonstrated that the longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in details.
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Citations by publishers
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1
2
3
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Elsevier
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3 publications, 30%
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IOP Publishing
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3 publications, 30%
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Wiley
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Wiley
1 publication, 10%
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1
2
3
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- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Shugurov K. et al. Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface. // Nanotechnology. 2020. Vol. 31. No. 24. p. 244003.
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Shugurov K., Mozharov A. M., Bolshakov A. P., Fedorov Y. V., Sapunov G. A., Shtrom I. V., Uvarov A., Kudryashov D. A., Baranov A. I., Mikhailovskii V., Neplokh V., Tchernycheva M., Cirlin G., Mukhin I. S. Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface. // Nanotechnology. 2020. Vol. 31. No. 24. p. 244003.
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TY - JOUR
DO - 10.1088/1361-6528/ab76f2
UR - https://doi.org/10.1088%2F1361-6528%2Fab76f2
TI - Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface.
T2 - Nanotechnology
AU - Shugurov, Konstantin
AU - Mozharov, A. M.
AU - Bolshakov, Alexey P.
AU - Fedorov, Yury V
AU - Sapunov, Georgiy A
AU - Shtrom, I V
AU - Uvarov, Alexander
AU - Kudryashov, D. A.
AU - Baranov, A. I.
AU - Mikhailovskii, V
AU - Neplokh, Vladimir
AU - Tchernycheva, Maria
AU - Cirlin, G.E.
AU - Mukhin, Ivan S.
PY - 2020
DA - 2020/03/27 00:00:00
PB - IOP Publishing
SP - 244003
IS - 24
VL - 31
SN - 0957-4484
SN - 1361-6528
ER -
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@article{2020_Shugurov,
author = {Konstantin Shugurov and A. M. Mozharov and Alexey P. Bolshakov and Yury V Fedorov and Georgiy A Sapunov and I V Shtrom and Alexander Uvarov and D. A. Kudryashov and A. I. Baranov and V Mikhailovskii and Vladimir Neplokh and Maria Tchernycheva and G.E. Cirlin and Ivan S. Mukhin},
title = {Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface.},
journal = {Nanotechnology},
year = {2020},
volume = {31},
publisher = {IOP Publishing},
month = {mar},
url = {https://doi.org/10.1088%2F1361-6528%2Fab76f2},
number = {24},
pages = {244003},
doi = {10.1088/1361-6528/ab76f2}
}
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Shugurov, Konstantin, et al. “Hydrogen passivation of the n-GaN nanowire / p-Si heterointerface..” Nanotechnology, vol. 31, no. 24, Mar. 2020, p. 244003. https://doi.org/10.1088%2F1361-6528%2Fab76f2.