IOP Publishing
Semiconductor Science and Technology
,  volume 37 ,  issue 5 ,  pages 55023

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

N A Torkhov
, 
A V Gradoboev
, 
K N Orlova
, 
A S Toropov
Publication type: Journal Article
Publication date: 2022-04-13
IOP Publishing
scimago Q2
wos Q3
SJR: 0.405
CiteScore: 4.2
Impact factor: 2.1
ISSN: 02681242, 13616641
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract

The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R SH , R SK , ρ and geometrical parameter L T on the LTLM test line width Wk . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.

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GOST Copy
Torkhov N. A. et al. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures // Semiconductor Science and Technology. 2022. Vol. 37. No. 5. p. 55023.
GOST all authors (up to 50) Copy
Torkhov N. A., Gradoboev A. V., Orlova K. N., Toropov A. S. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures // Semiconductor Science and Technology. 2022. Vol. 37. No. 5. p. 55023.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1088/1361-6641/ac557e
UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac557e
TI - Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
T2 - Semiconductor Science and Technology
AU - Torkhov, N A
AU - Gradoboev, A V
AU - Orlova, K N
AU - Toropov, A S
PY - 2022
DA - 2022/04/13
PB - IOP Publishing
SP - 55023
IS - 5
VL - 37
SN - 0268-1242
SN - 1361-6641
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2022_Torkhov,
author = {N A Torkhov and A V Gradoboev and K N Orlova and A S Toropov},
title = {Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures},
journal = {Semiconductor Science and Technology},
year = {2022},
volume = {37},
publisher = {IOP Publishing},
month = {apr},
url = {https://iopscience.iop.org/article/10.1088/1361-6641/ac557e},
number = {5},
pages = {55023},
doi = {10.1088/1361-6641/ac557e}
}
MLA
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MLA Copy
Torkhov, N. A., et al. “Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures.” Semiconductor Science and Technology, vol. 37, no. 5, Apr. 2022, p. 55023. https://iopscience.iop.org/article/10.1088/1361-6641/ac557e.