Semiconductor Science and Technology

, том 37 , издание 5 , страницы 55023

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Тип публикации: Journal Article

Дата публикации: 2022-04-13

IOP Publishing

Semiconductor Science and Technology

scimago Q2

wos Q3

white level БС2

SJR: 0.405

CiteScore: 4.2

Impact factor: 2.1

ISSN: 02681242, 13616641

DOI: 10.1088/1361-6641/ac557e

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Краткое описание

The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R _SH , R _SK , ρ and geometrical parameter L _T on the LTLM test line width W_k . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.

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Журналы

	1
Physica Scripta	Physica Scripta, 1, 33.33% Physica Scripta 1 публикация, 33.33%
Journal of Applied Physics	Journal of Applied Physics, 1, 33.33% Journal of Applied Physics 1 публикация, 33.33%
Physica Status Solidi (A) Applications and Materials Science	Physica Status Solidi (A) Applications and Materials Science, 1, 33.33% Physica Status Solidi (A) Applications and Materials Science 1 публикация, 33.33%
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IOP Publishing	IOP Publishing, 1, 33.33% IOP Publishing 1 публикация, 33.33%
AIP Publishing	AIP Publishing, 1, 33.33% AIP Publishing 1 публикация, 33.33%
Wiley	Wiley, 1, 33.33% Wiley 1 публикация, 33.33%
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ГОСТ |

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Torkhov N. A. et al. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures // Semiconductor Science and Technology. 2022. Vol. 37. No. 5. p. 55023.

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Torkhov N. A., Gradoboev A. V., Orlova K. N., Toropov A. S. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures // Semiconductor Science and Technology. 2022. Vol. 37. No. 5. p. 55023.

RIS |

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TY - JOUR

DO - 10.1088/1361-6641/ac557e

UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac557e

TI - Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

T2 - Semiconductor Science and Technology

AU - Torkhov, N A

AU - Gradoboev, A V

AU - Orlova, K N

AU - Toropov, A S

PY - 2022

DA - 2022/04/13

PB - IOP Publishing

SP - 55023

IS - 5

VL - 37

SN - 0268-1242

SN - 1361-6641

ER -

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@article{2022_Torkhov,

author = {N A Torkhov and A V Gradoboev and K N Orlova and A S Toropov},

title = {Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures},

journal = {Semiconductor Science and Technology},

year = {2022},

volume = {37},

publisher = {IOP Publishing},

month = {apr},

url = {https://iopscience.iop.org/article/10.1088/1361-6641/ac557e},

number = {5},

pages = {55023},

doi = {10.1088/1361-6641/ac557e}

}

MLA

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Torkhov, N. A., et al. “Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures.” Semiconductor Science and Technology, vol. 37, no. 5, Apr. 2022, p. 55023. https://iopscience.iop.org/article/10.1088/1361-6641/ac557e.