Superconductor Science and Technology, volume 37, issue 10, pages 105009

Molybdenum low resistance thin film resistors for cryogenic devices

Yu. P. Korneeva ¹

M Dryazgov ¹

N V Porokhov ¹

Nikita Osipov ¹

Maxim Krasilnikov ¹

A.A. Korneev ²

M A Tarkhov ¹

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FSBSI Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, RUSSIAN FEDERATION |

Department of Electronics Engineering, HSE Tikhonov Moscow Institute of Electronics and Mathematics, Moscow, RUSSIAN FEDERATION |

Publication type: Journal Article

Publication date: 2024-09-02

IOP Publishing

Journal: Superconductor Science and Technology

scimago Q1

SJR: 1.056

CiteScore: 6.8

Impact factor: 3.7

ISSN: 09532048, 13616668

DOI: 10.1088/1361-6668/ad6adb

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Abstract

We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN interface which together with additional aluminium bandage layer in the area of contact pads allow to reduce contact resistance below 1 Ω. The quality of the interfaces is confirmed by transmission electron microscopy and X-ray reflectometry.