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IOP Publishing
Journal of Physics: Conference Series
,  volume 1461 ,  issue 1 ,  pages 12039

Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon

Publication type: Journal Article
Publication date: 2020-03-01
IOP Publishing
SJR: 0.187
CiteScore: 1.3
Impact factor: —
ISSN: 17426588, 17426596
General Physics and Astronomy
Abstract

Formation and propagation of the antiphase domains in dilute nitride GaPN/GaP epitaxial heterostructures grown on Si (001) by plasma assisted molecular beam epitaxy (PA-MBE) on silicon is studied. Role of the layer composition, substrate orientation and growth conditions are discussed. Composition of the dilute nitride film was studied by X-ray diffraction (XRD) while the effect of the antiphase disorder in GaP buffer layer on GaPN epilayer structural properties was studied by transmission electron (TEM) and scanning electron microscopy (SEM). Controllable transition between antiphase disordered and monodomain film depending on the concentration of incorporated nitrogen is demonstrated – transition to the monodomain film occurs in dilute nitride GaPN layers starting low with 0.4% of incorporated nitrogen. Control of the antiphase disorder allows to tune mean film polarity and second order nonlinear optical response of III-phosphide heterostructures.

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Fedorov Y. V. et al. Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon // Journal of Physics: Conference Series. 2020. Vol. 1461. No. 1. p. 12039.
GOST all authors (up to 50) Copy
Fedorov Y. V., Bolshakov A. P., Koval O. Yu., Sapunov G. A., Sobolev M., Pirogov E. V., Kirilenko D., Mozharov A. M., Mukhin I. S. Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon // Journal of Physics: Conference Series. 2020. Vol. 1461. No. 1. p. 12039.
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TY - JOUR
DO - 10.1088/1742-6596/1461/1/012039
UR - https://doi.org/10.1088/1742-6596/1461/1/012039
TI - Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon
T2 - Journal of Physics: Conference Series
AU - Fedorov, Yury V
AU - Bolshakov, Alexey P.
AU - Koval, O Yu
AU - Sapunov, Georgiy A
AU - Sobolev, M.M.
AU - Pirogov, Evgeny V
AU - Kirilenko, D.A.
AU - Mozharov, A. M.
AU - Mukhin, Ivan S.
PY - 2020
DA - 2020/03/01
PB - IOP Publishing
SP - 12039
IS - 1
VL - 1461
SN - 1742-6588
SN - 1742-6596
ER -
BibTex |
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BibTex (up to 50 authors) Copy
@article{2020_Fedorov,
author = {Yury V Fedorov and Alexey P. Bolshakov and O Yu Koval and Georgiy A Sapunov and M.M. Sobolev and Evgeny V Pirogov and D.A. Kirilenko and A. M. Mozharov and Ivan S. Mukhin},
title = {Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon},
journal = {Journal of Physics: Conference Series},
year = {2020},
volume = {1461},
publisher = {IOP Publishing},
month = {mar},
url = {https://doi.org/10.1088/1742-6596/1461/1/012039},
number = {1},
pages = {12039},
doi = {10.1088/1742-6596/1461/1/012039}
}
MLA
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MLA Copy
Fedorov, Yury V., et al. “Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon.” Journal of Physics: Conference Series, vol. 1461, no. 1, Mar. 2020, p. 12039. https://doi.org/10.1088/1742-6596/1461/1/012039.