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Journal of Physics: Conference Series, volume 1697, issue 1, pages 12127

Epitaxial synthesis of single-domain gallium phosphide on silicon

Publication typeJournal Article
Publication date2020-12-01
Quartile SCImago
Quartile WOS
Impact factor
ISSN17426588, 17426596
General Physics and Astronomy
Abstract

The aim of the work is to investigate different approaches for the growth of planar gallium phosphide layers on silicon by molecular beam epitaxy. Atomic force microscopy and reflection high energy electron diffraction were used to study surface morphology and estimate the film domain structure. Developed growth technique with the use of a low-temperature AlGaP/GaP seeding layer allowed us to achieve atomically flat pseudomorphic single-phase GaP on Si(001).

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Physica B: Condensed Matter
Physica B: Condensed Matter, 1, 100%
Physica B: Condensed Matter
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Elsevier
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Elsevier
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Sapunov G. A. et al. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
GOST all authors (up to 50) Copy
Sapunov G. A., Koval O. Yu., Fedorov Y. V., Bolshakov A. P. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1088/1742-6596/1697/1/012127
UR - https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127
TI - Epitaxial synthesis of single-domain gallium phosphide on silicon
T2 - Journal of Physics: Conference Series
AU - Sapunov, Georgiy A
AU - Koval, O Yu
AU - Fedorov, Yury V
AU - Bolshakov, Alexey P.
PY - 2020
DA - 2020/12/01 00:00:00
PB - IOP Publishing
SP - 12127
IS - 1
VL - 1697
SN - 1742-6588
SN - 1742-6596
ER -
BibTex |
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BibTex Copy
@article{2020_Sapunov
author = {Georgiy A Sapunov and O Yu Koval and Yury V Fedorov and Alexey P. Bolshakov},
title = {Epitaxial synthesis of single-domain gallium phosphide on silicon},
journal = {Journal of Physics: Conference Series},
year = {2020},
volume = {1697},
publisher = {IOP Publishing},
month = {dec},
url = {https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127},
number = {1},
pages = {12127},
doi = {10.1088/1742-6596/1697/1/012127}
}
MLA
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MLA Copy
Sapunov, Georgiy A., et al. “Epitaxial synthesis of single-domain gallium phosphide on silicon.” Journal of Physics: Conference Series, vol. 1697, no. 1, Dec. 2020, p. 12127. https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127.
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