Open Access
Journal of Physics: Conference Series, volume 1697, issue 1, pages 12127
Epitaxial synthesis of single-domain gallium phosphide on silicon
Publication type: Journal Article
Publication date: 2020-12-01
Quartile SCImago
— Quartile WOS
—
Impact factor: —
ISSN: 17426588, 17426596
General Physics and Astronomy
Abstract
The aim of the work is to investigate different approaches for the growth of planar gallium phosphide layers on silicon by molecular beam epitaxy. Atomic force microscopy and reflection high energy electron diffraction were used to study surface morphology and estimate the film domain structure. Developed growth technique with the use of a low-temperature AlGaP/GaP seeding layer allowed us to achieve atomically flat pseudomorphic single-phase GaP on Si(001).
Citations by journals
1
|
|
Physica B: Condensed Matter
|
Physica B: Condensed Matter
1 publication, 100%
|
1
|
Citations by publishers
1
|
|
Elsevier
|
Elsevier
1 publication, 100%
|
1
|
- We do not take into account publications that without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
{"yearsCitations":{"type":"bar","data":{"show":true,"labels":[2024],"ids":[0],"codes":[0],"imageUrls":[""],"datasets":[{"label":"Citations number","data":[1],"backgroundColor":["#3B82F6"],"percentage":["100"],"barThickness":null}]},"options":{"indexAxis":"x","maintainAspectRatio":true,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":1,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Citations per year","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}},"journals":{"type":"bar","data":{"show":true,"labels":["Physica B: Condensed Matter"],"ids":[18171],"codes":[0],"imageUrls":["\/storage\/images\/resized\/GDnYOu1UpMMfMMRV6Aqle4H0YLLsraeD9IP9qScG_medium.webp"],"datasets":[{"label":"","data":[1],"backgroundColor":["#3B82F6"],"percentage":[100],"barThickness":13}]},"options":{"indexAxis":"y","maintainAspectRatio":false,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":null,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Journals","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}},"publishers":{"type":"bar","data":{"show":true,"labels":["Elsevier"],"ids":[17],"codes":[0],"imageUrls":["\/storage\/images\/resized\/GDnYOu1UpMMfMMRV6Aqle4H0YLLsraeD9IP9qScG_medium.webp"],"datasets":[{"label":"","data":[1],"backgroundColor":["#3B82F6"],"percentage":[100],"barThickness":13}]},"options":{"indexAxis":"y","maintainAspectRatio":false,"scales":{"y":{"ticks":{"precision":0,"autoSkip":false,"font":{"family":"Montserrat"},"color":"#000000"}},"x":{"ticks":{"stepSize":null,"precision":0,"font":{"family":"Montserrat"},"color":"#000000"}}},"plugins":{"legend":{"position":"top","labels":{"font":{"family":"Montserrat"},"color":"#000000"}},"title":{"display":true,"text":"Publishers","font":{"size":24,"family":"Montserrat","weight":600},"color":"#000000"}}}}}
Metrics
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Sapunov G. A. et al. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
GOST all authors (up to 50)
Copy
Sapunov G. A., Koval O. Yu., Fedorov Y. V., Bolshakov A. P. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1088/1742-6596/1697/1/012127
UR - https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127
TI - Epitaxial synthesis of single-domain gallium phosphide on silicon
T2 - Journal of Physics: Conference Series
AU - Sapunov, Georgiy A
AU - Koval, O Yu
AU - Fedorov, Yury V
AU - Bolshakov, Alexey P.
PY - 2020
DA - 2020/12/01 00:00:00
PB - IOP Publishing
SP - 12127
IS - 1
VL - 1697
SN - 1742-6588
SN - 1742-6596
ER -
Cite this
BibTex
Copy
@article{2020_Sapunov
author = {Georgiy A Sapunov and O Yu Koval and Yury V Fedorov and Alexey P. Bolshakov},
title = {Epitaxial synthesis of single-domain gallium phosphide on silicon},
journal = {Journal of Physics: Conference Series},
year = {2020},
volume = {1697},
publisher = {IOP Publishing},
month = {dec},
url = {https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127},
number = {1},
pages = {12127},
doi = {10.1088/1742-6596/1697/1/012127}
}
Cite this
MLA
Copy
Sapunov, Georgiy A., et al. “Epitaxial synthesis of single-domain gallium phosphide on silicon.” Journal of Physics: Conference Series, vol. 1697, no. 1, Dec. 2020, p. 12127. https://doi.org/10.1088%2F1742-6596%2F1697%2F1%2F012127.