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Epitaxial synthesis of single-domain gallium phosphide on silicon
Publication type: Journal Article
Publication date: 2020-12-01
SJR: 0.187
CiteScore: 1.3
Impact factor: —
ISSN: 17426588, 17426596
General Physics and Astronomy
Abstract
The aim of the work is to investigate different approaches for the growth of planar gallium phosphide layers on silicon by molecular beam epitaxy. Atomic force microscopy and reflection high energy electron diffraction were used to study surface morphology and estimate the film domain structure. Developed growth technique with the use of a low-temperature AlGaP/GaP seeding layer allowed us to achieve atomically flat pseudomorphic single-phase GaP on Si(001).
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Sapunov G. A. et al. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
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Sapunov G. A., Koval O. Yu., Fedorov Y. V., Bolshakov A. P. Epitaxial synthesis of single-domain gallium phosphide on silicon // Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. p. 12127.
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TY - JOUR
DO - 10.1088/1742-6596/1697/1/012127
UR - https://doi.org/10.1088/1742-6596/1697/1/012127
TI - Epitaxial synthesis of single-domain gallium phosphide on silicon
T2 - Journal of Physics: Conference Series
AU - Sapunov, Georgiy A
AU - Koval, O Yu
AU - Fedorov, Yury V
AU - Bolshakov, Alexey P.
PY - 2020
DA - 2020/12/01
PB - IOP Publishing
SP - 12127
IS - 1
VL - 1697
SN - 1742-6588
SN - 1742-6596
ER -
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BibTex (up to 50 authors)
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@article{2020_Sapunov,
author = {Georgiy A Sapunov and O Yu Koval and Yury V Fedorov and Alexey P. Bolshakov},
title = {Epitaxial synthesis of single-domain gallium phosphide on silicon},
journal = {Journal of Physics: Conference Series},
year = {2020},
volume = {1697},
publisher = {IOP Publishing},
month = {dec},
url = {https://doi.org/10.1088/1742-6596/1697/1/012127},
number = {1},
pages = {12127},
doi = {10.1088/1742-6596/1697/1/012127}
}
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MLA
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Sapunov, Georgiy A., et al. “Epitaxial synthesis of single-domain gallium phosphide on silicon.” Journal of Physics: Conference Series, vol. 1697, no. 1, Dec. 2020, p. 12127. https://doi.org/10.1088/1742-6596/1697/1/012127.