Processes of formation of epitaxial arrays of self-catalytic GaP nanowires on Si (111)

This study is devoted to the investigation of the effect of growth conditions (growth temperature, values of molecular beam fluxes) on the formation of self-catalytic GaP NW on Si(111), namely surface density, orientation and NW morphology. Nanowire arrays were grown on Si (111) by the plasma-assisted molecular beam epitaxy. It was determined that an increase of the temperature and a decrease of the Ga flux, while maintaining the V/III ratio, reduces the inclined NWs and parasitic islands nucleation probability.