IOP Conference Series: Materials Science and Engineering, volume 699, issue 1, pages 12047
Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires
Sharov Vladislav A
1, 2
,
Sharov V.
,
Mukhin I.S.
,
Sapunov G A
,
Shugurov K Yu
,
Bolshakov A.
,
Fedorov V.
,
Fedorov Vladimir D.
1
,
Mozharov A. M.
1
,
Publication type: Journal Article
Publication date: 2019-12-01
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ISSN: 17578981, 1757899X
General Medicine
Abstract
In this work, we use conductive atomic force microscopy (CAFM) to study the impact of substrate surface preparation and buffer layer composition on the electrical transport properties of GaN nanowires (NWs). I-V curves of single NWs from seven differently prepared samples were obtained. The tip of atomic force microscope (AFM) was used as a top conductive electrode to create stable electric contact to NW free upper grain, while the bottom contact was established between the highly doped Si substrate and a grounded sample holder of the AFM device. Single NW I-V curves were compared to those of NW arrays. The difference between them was discussed.
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Sharov V. et al. Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires // IOP Conference Series: Materials Science and Engineering. 2019. Vol. 699. No. 1. p. 12047.
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Sharov V., Bolshakov A., Fedorov V., Sapunov G. A., Mukhin I., Shugurov K. Yu., Sharov V. A., Bolshakov A. P., Fedorov V. D., Shugurov K., Mozharov A. M., Sapunov G. A., Mukhin I. S. Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires // IOP Conference Series: Materials Science and Engineering. 2019. Vol. 699. No. 1. p. 12047.
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TY - JOUR
DO - 10.1088/1757-899X/699/1/012047
UR - https://doi.org/10.1088%2F1757-899X%2F699%2F1%2F012047
TI - Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires
T2 - IOP Conference Series: Materials Science and Engineering
AU - Sharov, V.
AU - Bolshakov, A.
AU - Fedorov, V.
AU - Sapunov, G A
AU - Mukhin, I.S.
AU - Shugurov, K Yu
AU - Sharov, Vladislav A
AU - Bolshakov, Alexey P.
AU - Fedorov, Vladimir D.
AU - Shugurov, Konstantin
AU - Mozharov, A. M.
AU - Sapunov, Georgiy A
AU - Mukhin, Ivan S.
PY - 2019
DA - 2019/12/01 00:00:00
PB - IOP Publishing
SP - 12047
IS - 1
VL - 699
SN - 1757-8981
SN - 1757-899X
ER -
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@article{2019_Sharov,
author = {V. Sharov and A. Bolshakov and V. Fedorov and G A Sapunov and I.S. Mukhin and K Yu Shugurov and Vladislav A Sharov and Alexey P. Bolshakov and Vladimir D. Fedorov and Konstantin Shugurov and A. M. Mozharov and Georgiy A Sapunov and Ivan S. Mukhin},
title = {Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires},
journal = {IOP Conference Series: Materials Science and Engineering},
year = {2019},
volume = {699},
publisher = {IOP Publishing},
month = {dec},
url = {https://doi.org/10.1088%2F1757-899X%2F699%2F1%2F012047},
number = {1},
pages = {12047},
doi = {10.1088/1757-899X/699/1/012047}
}
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Sharov, V., et al. “Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires.” IOP Conference Series: Materials Science and Engineering, vol. 699, no. 1, Dec. 2019, p. 12047. https://doi.org/10.1088%2F1757-899X%2F699%2F1%2F012047.