Spin splitting of conduction subbands in GaAs-Ga 0.7 Al 0.3 As heterostructures
Тип публикации: Journal Article
Дата публикации: 1995-11-15
scimago Q1
wos Q2
БС1
SJR: 1.303
CiteScore: 6.2
Impact factor: 3.7
ISSN: 24699950, 24699969, 10980121, 1550235X
PubMed ID:
9980752
Краткое описание
The spin splitting of conduction subbands in GaAs-${\mathrm{Ga}}_{0.7}$${\mathrm{Al}}_{0.3}$As heterostructures is calculated using a five-level k\ensuremath{\cdot}p model and taking fully into account both bulk and structural inversion asymmetry of the system. The role of the boundary conditions for the structural inversion asymmetry is emphasized and it is shown (in contradiction to previous work) that this mechanism is of decisive importance for the spin splitting. Our theory is in agreement with the recent Raman data.
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Pfeffer P., Zawadzki W., Zawadzki W. Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures // Physical Review B. 1995. Vol. 52. No. 20. p. R14332-R14335.
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Pfeffer P., Zawadzki W., Zawadzki W. Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures // Physical Review B. 1995. Vol. 52. No. 20. p. R14332-R14335.
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TY - JOUR
DO - 10.1103/physrevb.52.r14332
UR - https://doi.org/10.1103/physrevb.52.r14332
TI - Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures
T2 - Physical Review B
AU - Pfeffer, P.
AU - Zawadzki, W.
AU - Zawadzki, Wlodek
PY - 1995
DA - 1995/11/15
PB - American Physical Society (APS)
SP - R14332-R14335
IS - 20
VL - 52
PMID - 9980752
SN - 2469-9950
SN - 2469-9969
SN - 1098-0121
SN - 1550-235X
ER -
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@article{1995_Pfeffer,
author = {P. Pfeffer and W. Zawadzki and Wlodek Zawadzki},
title = {Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures},
journal = {Physical Review B},
year = {1995},
volume = {52},
publisher = {American Physical Society (APS)},
month = {nov},
url = {https://doi.org/10.1103/physrevb.52.r14332},
number = {20},
pages = {R14332--R14335},
doi = {10.1103/physrevb.52.r14332}
}
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Pfeffer, P., et al. “Spin splitting of conduction subbands in GaAs-Ga0.7Al0.3As heterostructures.” Physical Review B, vol. 52, no. 20, Nov. 1995, pp. R14332-R14335. https://doi.org/10.1103/physrevb.52.r14332.